High mobility sputtered InSb film by blue laser diode annealing

C. J. Koswaththage; T. Higashizako; T. Okada; T. Sadoh; M. Furuta; B. S. Bae; T. Noguchi

doi:10.1063/1.5087235

High mobility sputtered InSb film by blue laser diode annealing

C. J. Koswaththage, T. Higashizako, T. Okada, T. Sadoh, M. Furuta, B. S. Bae, T. Noguchi

Electronic Devices

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Abstract

InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO₂ film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm²/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.

Original language	English
Article number	045009
Journal	AIP Advances
Volume	9
Issue number	4
DOIs	https://doi.org/10.1063/1.5087235
Publication status	Published - Apr 1 2019

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "High mobility sputtered InSb film by blue laser diode annealing",

abstract = "InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm2/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.",

author = "Koswaththage, {C. J.} and T. Higashizako and T. Okada and T. Sadoh and M. Furuta and Bae, {B. S.} and T. Noguchi",

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T1 - High mobility sputtered InSb film by blue laser diode annealing

AU - Koswaththage, C. J.

AU - Higashizako, T.

AU - Okada, T.

AU - Sadoh, T.

AU - Furuta, M.

AU - Bae, B. S.

AU - Noguchi, T.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm2/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.

AB - InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm2/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.

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High mobility sputtered InSb film by blue laser diode annealing

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