High mobility sputtered InSb film by blue laser diode annealing

C. J. Koswaththage, T. Higashizako, T. Okada, T. Sadoh, M. Furuta, B. S. Bae, T. Noguchi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm2/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.

Original languageEnglish
Article number045009
JournalAIP Advances
Issue number4
Publication statusPublished - Apr 1 2019

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


Dive into the research topics of 'High mobility sputtered InSb film by blue laser diode annealing'. Together they form a unique fingerprint.

Cite this