High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semiinsulating-lnP buried structure

M. Yuda; K. Kato; R. Iga; M. Mitsuhara

doi:10.1049/el:19990961

High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semiinsulating-lnP buried structure

M. Yuda, K. Kato, R. Iga, M. Mitsuhara

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A semi-insulating InP buried structure is applied to a unitravelling-carrier waveguide photodiode to enable the device to receive high input power by dispersing the heat generated from the waveguide-mesa region. The product of the photocurrent and applied voltage, which indicates the allowable level of input power, is four times higher than that of a polyimide-passivated mesa structure. The device has a product of ∼ 120mW (23.5mA × 5V), a responsivity of 0.7AAV, and a bandwidth of 47GHz.

Original language	English
Pages (from-to)	1377-1379
Number of pages	3
Journal	Electronics Letters
Volume	35
Issue number	16
DOIs	https://doi.org/10.1049/el:19990961
Publication status	Published - Aug 5 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19990961

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abstract = "A semi-insulating InP buried structure is applied to a unitravelling-carrier waveguide photodiode to enable the device to receive high input power by dispersing the heat generated from the waveguide-mesa region. The product of the photocurrent and applied voltage, which indicates the allowable level of input power, is four times higher than that of a polyimide-passivated mesa structure. The device has a product of ∼ 120mW (23.5mA × 5V), a responsivity of 0.7AAV, and a bandwidth of 47GHz.",

author = "M. Yuda and K. Kato and R. Iga and M. Mitsuhara",

year = "1999",

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AU - Yuda, M.

AU - Kato, K.

AU - Iga, R.

AU - Mitsuhara, M.

PY - 1999/8/5

Y1 - 1999/8/5

N2 - A semi-insulating InP buried structure is applied to a unitravelling-carrier waveguide photodiode to enable the device to receive high input power by dispersing the heat generated from the waveguide-mesa region. The product of the photocurrent and applied voltage, which indicates the allowable level of input power, is four times higher than that of a polyimide-passivated mesa structure. The device has a product of ∼ 120mW (23.5mA × 5V), a responsivity of 0.7AAV, and a bandwidth of 47GHz.

AB - A semi-insulating InP buried structure is applied to a unitravelling-carrier waveguide photodiode to enable the device to receive high input power by dispersing the heat generated from the waveguide-mesa region. The product of the photocurrent and applied voltage, which indicates the allowable level of input power, is four times higher than that of a polyimide-passivated mesa structure. The device has a product of ∼ 120mW (23.5mA × 5V), a responsivity of 0.7AAV, and a bandwidth of 47GHz.

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High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semiinsulating-lnP buried structure

Abstract

All Science Journal Classification (ASJC) codes

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