High-field electron transport in A-Si: H

Shozo Imao, Shigeki Nakajima, Jun Ichi Nakata, Reiji Hattori, Junji Shirafuji, Yoshio Inuishi

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


High-electric-field electron transport in a-Si:H films has been investigated by means of time-of-flight (TOF) measurements. The drift mobility increased with increasing applied field at lower temperature (<300 K), accompanied by a simultaneous increase in the dispersion parameter resulting in nondispersive transport. The mobility was much less field- dependent at higher temperature where the nondispersive transport was attained. The experimental results are consistently explained by taking account of the increase in electron temperature (hot electron) at higher field into the theory of dispersive transport.

Original languageEnglish
Pages (from-to)1227-1230
Number of pages4
JournalJapanese journal of applied physics
Issue number7
Publication statusPublished - Jul 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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