TY - JOUR
T1 - High EQE and High Brightness Solution-Processed TADF Light-Emitting Transistors and OLEDs
AU - Ahmad, Viqar
AU - Sobus, Jan
AU - Bencheikh, Fatima
AU - Mamada, Masashi
AU - Adachi, Chihaya
AU - Lo, Shih Chun
AU - Namdas, Ebinazar B.
N1 - Funding Information:
The authors thank Australian Research Council (No. DP160100700), Department of Industry, Innovation and Science (No. AISRF53765), and Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, under JST ERATO Grant No. JPMJER1305, Japan, for supporting this work. V.A. was funded by an Australian Postgraduate Award. E.B.N. is the recipient of UQ Fellowship. This work was performed in part at the Queensland node of the Australian National Fabrication Facility Queensland Node (ANFF‐Q)—a company established under the National Collaborative Research Infrastructure Strategy to provide nano and microfabrication facilities for Australia's researchers.
Funding Information:
The authors thank Australian Research Council (No. DP160100700), Department of Industry, Innovation and Science (No. AISRF53765), and Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, under JST ERATO Grant No. JPMJER1305, Japan, for supporting this work. V.A. was funded by an Australian Postgraduate Award. E.B.N. is the recipient of UQ Fellowship. This work was performed in part at the Queensland node of the Australian National Fabrication Facility Queensland Node (ANFF-Q)?a company established under the National Collaborative Research Infrastructure Strategy to provide nano and microfabrication facilities for Australia's researchers.
Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/9/1
Y1 - 2020/9/1
N2 - Thermally activated delayed fluorescence (TADF) emitters can exhibit high quantum efficiencies by harvesting triplet excitons through efficient reverse intersystem crossing. Reports on efficient TADF based light-emitting field-effect transistors (LEFETs) are rare. Moreover, despite efficient TADF organic light-emitting diodes (OLEDs), most devices have thermally evaporated multilayer device designs. In this work, highly efficient solution processed LEFETs using ACRXTN [3-(9,9-dimethylacridin-10(9H)-yl)-9H-xanthen-9-one] are demonstrated to show high external quantum efficiencies (EQEs) of ≈1% and on/off ratios (≈105) at low operating voltages (≈22 V) with negligible EQE roll-off even at ≈1,500 cd m–2. The same emitter is further studied in solution-processedOLEDs with a simple architecture to achieve high peak EQEs (≈16%) and brightness ('1000 cd m–2). The OLEDs retain a high EQE (≈10%) at 20 000 cd m–2, indicating excellent charge balance even with such simple device architecture. Our optical simulations identify EQE discrepancy in the two devices, mainly arisen from a poorer light out-coupling efficiency in the LEFETs (0.8%) than that (≈24%) in the OLEDs. This work shows state-of-the-art of solution-processed TADF LEFETs and OLEDs with simple device architectures and negligible EQE roll-off.
AB - Thermally activated delayed fluorescence (TADF) emitters can exhibit high quantum efficiencies by harvesting triplet excitons through efficient reverse intersystem crossing. Reports on efficient TADF based light-emitting field-effect transistors (LEFETs) are rare. Moreover, despite efficient TADF organic light-emitting diodes (OLEDs), most devices have thermally evaporated multilayer device designs. In this work, highly efficient solution processed LEFETs using ACRXTN [3-(9,9-dimethylacridin-10(9H)-yl)-9H-xanthen-9-one] are demonstrated to show high external quantum efficiencies (EQEs) of ≈1% and on/off ratios (≈105) at low operating voltages (≈22 V) with negligible EQE roll-off even at ≈1,500 cd m–2. The same emitter is further studied in solution-processedOLEDs with a simple architecture to achieve high peak EQEs (≈16%) and brightness ('1000 cd m–2). The OLEDs retain a high EQE (≈10%) at 20 000 cd m–2, indicating excellent charge balance even with such simple device architecture. Our optical simulations identify EQE discrepancy in the two devices, mainly arisen from a poorer light out-coupling efficiency in the LEFETs (0.8%) than that (≈24%) in the OLEDs. This work shows state-of-the-art of solution-processed TADF LEFETs and OLEDs with simple device architectures and negligible EQE roll-off.
UR - http://www.scopus.com/inward/record.url?scp=85087571595&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85087571595&partnerID=8YFLogxK
U2 - 10.1002/adom.202000554
DO - 10.1002/adom.202000554
M3 - Article
AN - SCOPUS:85087571595
SN - 2195-1071
VL - 8
JO - Advanced Optical Materials
JF - Advanced Optical Materials
IS - 18
M1 - 2000554
ER -