High electron mobility (>16 cm2/Vsec) FETs with high on/off ratio (>106) and highly conductive films (σ>102 S/cm) by chemical doping in very thin (∼20 nm) TiO2 films on thermally grown SiO2

Go Oike; Takeaki Yajima; Tomonori Nishimura; Kosuke Nagashio; Akira Toriumi

doi:10.1109/IEDM.2013.6724610

High electron mobility (>16 cm²/V_sec) FETs with high on/off ratio (>10⁶) and highly conductive films (σ>10² S/cm) by chemical doping in very thin (∼20 nm) TiO₂ films on thermally grown SiO₂

Go Oike, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have investigated electrical conduction of TiO₂ films by both field-effect and chemical doping. We report that FET characteristics of TiO₂ are affected very much by PDA condition and that its conductivity is also significantly increased by chemical doping. The results are quite promising for both TFT and transparent electrode applications of Ti O₂.

Original language	English
Title of host publication	2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages	11.5.1-11.5.4
DOIs	https://doi.org/10.1109/IEDM.2013.6724610
Publication status	Published - 2013
Externally published	Yes
Event	2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States Duration: Dec 9 2013 → Dec 11 2013

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2013 IEEE International Electron Devices Meeting, IEDM 2013
Country/Territory	United States
City	Washington, DC
Period	12/9/13 → 12/11/13

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2013.6724610

Cite this

Oike, G., Yajima, T., Nishimura, T., Nagashio, K., & Toriumi, A. (2013). High electron mobility (>16 cm²/V_sec) FETs with high on/off ratio (>10⁶) and highly conductive films (σ>10² S/cm) by chemical doping in very thin (∼20 nm) TiO₂ films on thermally grown SiO₂. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 11.5.1-11.5.4). Article 6724610 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724610

High electron mobility (>16 cm²/V_sec) FETs with high on/off ratio (>10⁶) and highly conductive films (σ>10² S/cm) by chemical doping in very thin (∼20 nm) TiO₂ films on thermally grown SiO₂. / Oike, Go; Yajima, Takeaki; Nishimura, Tomonori et al.
2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 11.5.1-11.5.4 6724610 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Oike, G, Yajima, T, Nishimura, T, Nagashio, K & Toriumi, A 2013, High electron mobility (>16 cm²/V_sec) FETs with high on/off ratio (>10⁶) and highly conductive films (σ>10² S/cm) by chemical doping in very thin (∼20 nm) TiO₂ films on thermally grown SiO₂. in 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724610, Technical Digest - International Electron Devices Meeting, IEDM, pp. 11.5.1-11.5.4, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 12/9/13. https://doi.org/10.1109/IEDM.2013.6724610

Oike G, Yajima T, Nishimura T, Nagashio K, Toriumi A. High electron mobility (>16 cm²/V_sec) FETs with high on/off ratio (>10⁶) and highly conductive films (σ>10² S/cm) by chemical doping in very thin (∼20 nm) TiO₂ films on thermally grown SiO₂. In 2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 11.5.1-11.5.4. 6724610. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2013.6724610

Oike, Go ; Yajima, Takeaki ; Nishimura, Tomonori et al. / High electron mobility (>16 cm²/V_sec) FETs with high on/off ratio (>10⁶) and highly conductive films (σ>10² S/cm) by chemical doping in very thin (∼20 nm) TiO₂ films on thermally grown SiO₂. 2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. pp. 11.5.1-11.5.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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