High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation

Peng Luo; Sankara Narayanan Ekkanath Madathil; Shin Ichi Nishizawa; Wataru Saito

doi:10.1109/APEC39645.2020.9124293

High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation

Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin Ichi Nishizawa, Wataru Saito

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

High dV/dt controllability of IGBT is an important factor for flexible design as well as low switching loss in power electronics systems. However, Dynamic Avalanche (DA) phenomenon poses a fundamental limit on their dV/dt control range, operating current density, turn-off power loss as well as reliability. Overcoming this phenomenon is essential to ensure their safe operation and high robustness in emerging electric transport. In this work, detailed analysis of 1.2 kV trench gated IGBTs is undertaken through experiments and calibrated TCAD 3-dimensional simulations to show the fundamental cause of the low dV/dt controllability of conventional IGBTs and a method to achieve DA free design by Trench Clustered IGBT (TCIGBT). The potential of TCIGBT for ultra-high current density operation with high dV/dt controllability is also presented.

Original language	English
Title of host publication	APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	686-689
Number of pages	4
ISBN (Electronic)	9781728148298
DOIs	https://doi.org/10.1109/APEC39645.2020.9124293
Publication status	Published - Mar 2020
Event	35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020 - New Orleans, United States Duration: Mar 15 2020 → Mar 19 2020

Publication series

Name	Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume	2020-March

Conference

Conference	35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020
Country/Territory	United States
City	New Orleans
Period	3/15/20 → 3/19/20

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/APEC39645.2020.9124293

Cite this

Luo, P., Ekkanath Madathil, S. N., Nishizawa, S. I., & Saito, W. (2020). High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation. In APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition (pp. 686-689). Article 9124293 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2020-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC39645.2020.9124293

High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation. / Luo, Peng; Ekkanath Madathil, Sankara Narayanan; Nishizawa, Shin Ichi et al.
APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2020. p. 686-689 9124293 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2020-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Luo, P, Ekkanath Madathil, SN, Nishizawa, SI & Saito, W 2020, High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation. in APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition., 9124293, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, vol. 2020-March, Institute of Electrical and Electronics Engineers Inc., pp. 686-689, 35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020, New Orleans, United States, 3/15/20. https://doi.org/10.1109/APEC39645.2020.9124293

Luo P, Ekkanath Madathil SN, Nishizawa SI , Saito W. High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation. In APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc. 2020. p. 686-689. 9124293. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). doi: 10.1109/APEC39645.2020.9124293

Luo, Peng ; Ekkanath Madathil, Sankara Narayanan ; Nishizawa, Shin Ichi et al. / High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation. APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 686-689 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

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abstract = "High dV/dt controllability of IGBT is an important factor for flexible design as well as low switching loss in power electronics systems. However, Dynamic Avalanche (DA) phenomenon poses a fundamental limit on their dV/dt control range, operating current density, turn-off power loss as well as reliability. Overcoming this phenomenon is essential to ensure their safe operation and high robustness in emerging electric transport. In this work, detailed analysis of 1.2 kV trench gated IGBTs is undertaken through experiments and calibrated TCAD 3-dimensional simulations to show the fundamental cause of the low dV/dt controllability of conventional IGBTs and a method to achieve DA free design by Trench Clustered IGBT (TCIGBT). The potential of TCIGBT for ultra-high current density operation with high dV/dt controllability is also presented.",

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High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation

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