TY - GEN
T1 - High-density room-temperature 3D chip-stacking using mechanical caulking with compliant bump and through-hole-electrode
AU - Watanabe, Naoya
AU - Kawashita, Michihiro
AU - Yoshimura, Yasuhiro
AU - Tanaka, Naotaka
AU - Asano, Tanemasa
PY - 2010
Y1 - 2010
N2 - In this study, we employ a novel compliant bump in 3D chip-stacking using mechanical caulking. The compliant bump prepared in this work has a cone-like structure and is made of. Au. It is fabricated using an "undercut resist method," which combines undercut resist pattern formation with electroplating. The size of the compliant bump (approximately 10-30 μm in diameter) is much smaller than that of the stud bump. We demonstrate that by using a mechanical caulking process with a compliant bump and a through-hole-electrode, high-density through-hole-electrode interconnection (I/O number: 8,000, pitch: 20 μm) becomes possible, even at room temperature.
AB - In this study, we employ a novel compliant bump in 3D chip-stacking using mechanical caulking. The compliant bump prepared in this work has a cone-like structure and is made of. Au. It is fabricated using an "undercut resist method," which combines undercut resist pattern formation with electroplating. The size of the compliant bump (approximately 10-30 μm in diameter) is much smaller than that of the stud bump. We demonstrate that by using a mechanical caulking process with a compliant bump and a through-hole-electrode, high-density through-hole-electrode interconnection (I/O number: 8,000, pitch: 20 μm) becomes possible, even at room temperature.
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U2 - 10.1115/InterPACK2009-89274
DO - 10.1115/InterPACK2009-89274
M3 - Conference contribution
AN - SCOPUS:77953730272
SN - 9780791843598
T3 - Proceedings of the ASME InterPack Conference 2009, IPACK2009
SP - 33
EP - 38
BT - Proceedings of the ASME InterPack Conference 2009, IPACK2009
T2 - 2009 ASME InterPack Conference, IPACK2009
Y2 - 19 July 2009 through 23 July 2009
ER -