High conductivity of quasi-one-dimensional compound KFeS2 by heat treatment under iodine pressure

Kiichiro Takenaka; Hisao Kuriyaki

High conductivity of quasi-one-dimensional compound KFeS₂ by heat treatment under iodine pressure

Kiichiro Takenaka, Hisao Kuriyaki

Electronic Devices

Research output: Contribution to journal › Article › peer-review

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Abstract

Quasi-one-dimensional compound KFeS₂ crystals have been heat-treated under iodine pressure. In comparison with the as-grown crystal, the electrical resistivity of the iodine-treated crystal shows a weak temperature dependence. Applying Sheng's fluctuation induced tunneling model to the temperature dependence of the resistivity, an effect of the iodine heat-treatment can be understood to bring reduction of a potential barrier formed between the fine crystals.

Original language	English
Pages (from-to)	195-198
Number of pages	4
Journal	Research Reports on Information Science and Electrical Engineering of Kyushu University
Volume	4
Issue number	2
Publication status	Published - Sept 1999

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Engineering (miscellaneous)
Electrical and Electronic Engineering

Cite this

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title = "High conductivity of quasi-one-dimensional compound KFeS2 by heat treatment under iodine pressure",

abstract = "Quasi-one-dimensional compound KFeS2 crystals have been heat-treated under iodine pressure. In comparison with the as-grown crystal, the electrical resistivity of the iodine-treated crystal shows a weak temperature dependence. Applying Sheng's fluctuation induced tunneling model to the temperature dependence of the resistivity, an effect of the iodine heat-treatment can be understood to bring reduction of a potential barrier formed between the fine crystals.",

author = "Kiichiro Takenaka and Hisao Kuriyaki",

year = "1999",

month = sep,

language = "English",

volume = "4",

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journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",

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publisher = "Kyushu University, Faculty of Science",

number = "2",

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AU - Takenaka, Kiichiro

AU - Kuriyaki, Hisao

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N2 - Quasi-one-dimensional compound KFeS2 crystals have been heat-treated under iodine pressure. In comparison with the as-grown crystal, the electrical resistivity of the iodine-treated crystal shows a weak temperature dependence. Applying Sheng's fluctuation induced tunneling model to the temperature dependence of the resistivity, an effect of the iodine heat-treatment can be understood to bring reduction of a potential barrier formed between the fine crystals.

AB - Quasi-one-dimensional compound KFeS2 crystals have been heat-treated under iodine pressure. In comparison with the as-grown crystal, the electrical resistivity of the iodine-treated crystal shows a weak temperature dependence. Applying Sheng's fluctuation induced tunneling model to the temperature dependence of the resistivity, an effect of the iodine heat-treatment can be understood to bring reduction of a potential barrier formed between the fine crystals.

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M3 - Article

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SN - 1342-3819

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JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

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ER -

High conductivity of quasi-one-dimensional compound KFeS₂ by heat treatment under iodine pressure

Abstract

All Science Journal Classification (ASJC) codes

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