High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process

Wataru Saito; Ichiro Omura; Satoshi Aida; Shigeo Koduki; Masaru Izumisawa; Hironori Yoshioka; Tsuneo Ogura

doi:10.1109/TED.2005.856804

High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka, Tsuneo Ogura

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time, realizing low on-resistance below the theoretical Si limit. The fabricated MOSFETs have a semi-superjunction (SemiSJ) structure, which is the combination of a superjunction (SJ) structure and an n-bottom assisted layer. The SemiSJ MOSFETs realize both the high breakdown voltage of 1110 and 1400 V and the low on-resistance of 54 and 163 mΩcm², respectively. The fabrication process for the high-voltage SemiSJ-MOSFET was completely equivalent to a 600-V class SJ-MOSFET process, which implies that a single optimized process for forming SJ structure for 600 V-class MOSFET can be used for a wide voltage range extending up to 1200 V MOSFET. Additionally the fabricated MOSFETs realized low R_onQ_gd of 4.6ΩnC for a 1110-V device and 13.1 ΩnC for a 1400-V device, and recovery characteristics of the body diode were softer than those for the SJ MOSFET. These results show the possibility of new Si power-MOSFET with a higher application voltage range.

Original language	English
Pages (from-to)	2317-2322
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	10
DOIs	https://doi.org/10.1109/TED.2005.856804
Publication status	Published - Oct 1 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2005.856804

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title = "High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process",

abstract = "Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time, realizing low on-resistance below the theoretical Si limit. The fabricated MOSFETs have a semi-superjunction (SemiSJ) structure, which is the combination of a superjunction (SJ) structure and an n-bottom assisted layer. The SemiSJ MOSFETs realize both the high breakdown voltage of 1110 and 1400 V and the low on-resistance of 54 and 163 mΩcm2, respectively. The fabrication process for the high-voltage SemiSJ-MOSFET was completely equivalent to a 600-V class SJ-MOSFET process, which implies that a single optimized process for forming SJ structure for 600 V-class MOSFET can be used for a wide voltage range extending up to 1200 V MOSFET. Additionally the fabricated MOSFETs realized low RonQgd of 4.6ΩnC for a 1110-V device and 13.1 ΩnC for a 1400-V device, and recovery characteristics of the body diode were softer than those for the SJ MOSFET. These results show the possibility of new Si power-MOSFET with a higher application voltage range.",

author = "Wataru Saito and Ichiro Omura and Satoshi Aida and Shigeo Koduki and Masaru Izumisawa and Hironori Yoshioka and Tsuneo Ogura",

year = "2005",

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T1 - High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process

AU - Saito, Wataru

AU - Omura, Ichiro

AU - Aida, Satoshi

AU - Koduki, Shigeo

AU - Izumisawa, Masaru

AU - Yoshioka, Hironori

AU - Ogura, Tsuneo

PY - 2005/10/1

Y1 - 2005/10/1

N2 - Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time, realizing low on-resistance below the theoretical Si limit. The fabricated MOSFETs have a semi-superjunction (SemiSJ) structure, which is the combination of a superjunction (SJ) structure and an n-bottom assisted layer. The SemiSJ MOSFETs realize both the high breakdown voltage of 1110 and 1400 V and the low on-resistance of 54 and 163 mΩcm2, respectively. The fabrication process for the high-voltage SemiSJ-MOSFET was completely equivalent to a 600-V class SJ-MOSFET process, which implies that a single optimized process for forming SJ structure for 600 V-class MOSFET can be used for a wide voltage range extending up to 1200 V MOSFET. Additionally the fabricated MOSFETs realized low RonQgd of 4.6ΩnC for a 1110-V device and 13.1 ΩnC for a 1400-V device, and recovery characteristics of the body diode were softer than those for the SJ MOSFET. These results show the possibility of new Si power-MOSFET with a higher application voltage range.

AB - Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time, realizing low on-resistance below the theoretical Si limit. The fabricated MOSFETs have a semi-superjunction (SemiSJ) structure, which is the combination of a superjunction (SJ) structure and an n-bottom assisted layer. The SemiSJ MOSFETs realize both the high breakdown voltage of 1110 and 1400 V and the low on-resistance of 54 and 163 mΩcm2, respectively. The fabrication process for the high-voltage SemiSJ-MOSFET was completely equivalent to a 600-V class SJ-MOSFET process, which implies that a single optimized process for forming SJ structure for 600 V-class MOSFET can be used for a wide voltage range extending up to 1200 V MOSFET. Additionally the fabricated MOSFETs realized low RonQgd of 4.6ΩnC for a 1110-V device and 13.1 ΩnC for a 1400-V device, and recovery characteristics of the body diode were softer than those for the SJ MOSFET. These results show the possibility of new Si power-MOSFET with a higher application voltage range.

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High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process

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