High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current

Masahiko Kuraguchi; Yoshiharu Takada; Wataru Saito; Ichiro Omura; Kunio Tsuda

doi:10.1002/pssc.200461416

High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current

Masahiko Kuraguchi, Yoshiharu Takada, Wataru Saito, Ichiro Omura, Kunio Tsuda

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A high-breakdown voltage AlGaN/GaN MIS-HFET with extreme low leakage current was fabricated for power electronics applications. The fabricated device realized the high breakdown voltage of 550 V with the field plate structure and achieved dramatic reduction of the leakage current to 20 nA/mm due to the MIS gate structure. The leakage current of the MIS-HFET is three orders of magnitude lower than that of the AlGaN/GaN HFET without MIS structure.

Original language	English
Pages (from-to)	2647-2650
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200461416
Publication status	Published - 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200461416

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title = "High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current",

abstract = "A high-breakdown voltage AlGaN/GaN MIS-HFET with extreme low leakage current was fabricated for power electronics applications. The fabricated device realized the high breakdown voltage of 550 V with the field plate structure and achieved dramatic reduction of the leakage current to 20 nA/mm due to the MIS gate structure. The leakage current of the MIS-HFET is three orders of magnitude lower than that of the AlGaN/GaN HFET without MIS structure.",

author = "Masahiko Kuraguchi and Yoshiharu Takada and Wataru Saito and Ichiro Omura and Kunio Tsuda",

year = "2005",

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T1 - High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current

AU - Kuraguchi, Masahiko

AU - Takada, Yoshiharu

AU - Saito, Wataru

AU - Omura, Ichiro

AU - Tsuda, Kunio

PY - 2005

Y1 - 2005

N2 - A high-breakdown voltage AlGaN/GaN MIS-HFET with extreme low leakage current was fabricated for power electronics applications. The fabricated device realized the high breakdown voltage of 550 V with the field plate structure and achieved dramatic reduction of the leakage current to 20 nA/mm due to the MIS gate structure. The leakage current of the MIS-HFET is three orders of magnitude lower than that of the AlGaN/GaN HFET without MIS structure.

AB - A high-breakdown voltage AlGaN/GaN MIS-HFET with extreme low leakage current was fabricated for power electronics applications. The fabricated device realized the high breakdown voltage of 550 V with the field plate structure and achieved dramatic reduction of the leakage current to 20 nA/mm due to the MIS gate structure. The leakage current of the MIS-HFET is three orders of magnitude lower than that of the AlGaN/GaN HFET without MIS structure.

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

ER -

High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current

Abstract

All Science Journal Classification (ASJC) codes

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