TY - GEN
T1 - High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise
AU - Mizoguchi, Takeshi
AU - Sakiyama, Yoko
AU - Tsukamoto, Naoto
AU - Saito, Wataru
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/5
Y1 - 2019/5
N2 - This paper presents a newly developed compact model of IGBT/IEGTs for prediction of power-loss and Electro-Magnetic-Interference (EMI) noise accurately. The proposed model focuses on the capacitance changes between each terminal during the switching operation and has two specific features, (1) the gate-emitter capacitance Cge formed by non-linear functions which consider the negative capacitance for reproducing the turn-on dI/dt and (2) sub-circuits with ideal-diode and CR connected to the gate-collector and the collector-emitter for reproducing the turn-off dV/dt and the tail current. Compared to the conventional model, it was concluded that the proposed model is able to reproduce the measured turn-on and turn-off switching waveform accurately with high convergence.
AB - This paper presents a newly developed compact model of IGBT/IEGTs for prediction of power-loss and Electro-Magnetic-Interference (EMI) noise accurately. The proposed model focuses on the capacitance changes between each terminal during the switching operation and has two specific features, (1) the gate-emitter capacitance Cge formed by non-linear functions which consider the negative capacitance for reproducing the turn-on dI/dt and (2) sub-circuits with ideal-diode and CR connected to the gate-collector and the collector-emitter for reproducing the turn-off dV/dt and the tail current. Compared to the conventional model, it was concluded that the proposed model is able to reproduce the measured turn-on and turn-off switching waveform accurately with high convergence.
UR - http://www.scopus.com/inward/record.url?scp=85073907128&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073907128&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2019.8757656
DO - 10.1109/ISPSD.2019.8757656
M3 - Conference contribution
AN - SCOPUS:85073907128
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 307
EP - 310
BT - 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
Y2 - 19 May 2019 through 23 May 2019
ER -