HfO2-assisted SiO2 reduction in HfO 2/SiO2/Si stacks

Xiuyan Li; Takeaki Yajima; Tomonori Nishimura; Kosuke Nagashio; Akira Toriumi

doi:10.1016/j.tsf.2013.10.142

HfO₂-assisted SiO₂ reduction in HfO ₂/SiO₂/Si stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The ultra-thin SiO₂ interface layer (SiO₂-IL) in the HfO₂/SiO₂/Si stack was found to be reduced during the ultra-high vacuum (UHV) annealing. Along with thin SiO₂-IL reduction in UHV, SiO desorption and silicide formation also took place. The thermal desorption spectroscopy and X-ray photoelectron spectroscopy results showed that the SiO₂-IL reduction occurred at temperatures lower than the temperature showing SiO desorption and silicidation by accurately controlling the annealing conditions. The mechanism of SiO₂-IL reduction can be explained by the oxygen diffusion through oxygen vacancies in HfO₂ generated in the gate stack formation and thermal treatment. It is also understandable that the silicidation process is associated with the inhomogeneous SiO desorption.

Original language	English
Pages (from-to)	272-275
Number of pages	4
Journal	Thin Solid Films
Volume	557
DOIs	https://doi.org/10.1016/j.tsf.2013.10.142
Publication status	Published - Apr 30 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2013.10.142

Cite this

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title = "HfO2-assisted SiO2 reduction in HfO 2/SiO2/Si stacks",

abstract = "The ultra-thin SiO2 interface layer (SiO2-IL) in the HfO2/SiO2/Si stack was found to be reduced during the ultra-high vacuum (UHV) annealing. Along with thin SiO2-IL reduction in UHV, SiO desorption and silicide formation also took place. The thermal desorption spectroscopy and X-ray photoelectron spectroscopy results showed that the SiO2-IL reduction occurred at temperatures lower than the temperature showing SiO desorption and silicidation by accurately controlling the annealing conditions. The mechanism of SiO2-IL reduction can be explained by the oxygen diffusion through oxygen vacancies in HfO2 generated in the gate stack formation and thermal treatment. It is also understandable that the silicidation process is associated with the inhomogeneous SiO desorption.",

author = "Xiuyan Li and Takeaki Yajima and Tomonori Nishimura and Kosuke Nagashio and Akira Toriumi",

note = "Funding Information: Xiuyan Li is grateful to the China Scholarship Council for the financial support.",

year = "2014",

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doi = "10.1016/j.tsf.2013.10.142",

language = "English",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - HfO2-assisted SiO2 reduction in HfO 2/SiO2/Si stacks

AU - Li, Xiuyan

AU - Yajima, Takeaki

AU - Nishimura, Tomonori

AU - Nagashio, Kosuke

AU - Toriumi, Akira

N1 - Funding Information: Xiuyan Li is grateful to the China Scholarship Council for the financial support.

PY - 2014/4/30

Y1 - 2014/4/30

N2 - The ultra-thin SiO2 interface layer (SiO2-IL) in the HfO2/SiO2/Si stack was found to be reduced during the ultra-high vacuum (UHV) annealing. Along with thin SiO2-IL reduction in UHV, SiO desorption and silicide formation also took place. The thermal desorption spectroscopy and X-ray photoelectron spectroscopy results showed that the SiO2-IL reduction occurred at temperatures lower than the temperature showing SiO desorption and silicidation by accurately controlling the annealing conditions. The mechanism of SiO2-IL reduction can be explained by the oxygen diffusion through oxygen vacancies in HfO2 generated in the gate stack formation and thermal treatment. It is also understandable that the silicidation process is associated with the inhomogeneous SiO desorption.

AB - The ultra-thin SiO2 interface layer (SiO2-IL) in the HfO2/SiO2/Si stack was found to be reduced during the ultra-high vacuum (UHV) annealing. Along with thin SiO2-IL reduction in UHV, SiO desorption and silicide formation also took place. The thermal desorption spectroscopy and X-ray photoelectron spectroscopy results showed that the SiO2-IL reduction occurred at temperatures lower than the temperature showing SiO desorption and silicidation by accurately controlling the annealing conditions. The mechanism of SiO2-IL reduction can be explained by the oxygen diffusion through oxygen vacancies in HfO2 generated in the gate stack formation and thermal treatment. It is also understandable that the silicidation process is associated with the inhomogeneous SiO desorption.

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JO - Thin Solid Films

JF - Thin Solid Films

ER -

HfO₂-assisted SiO₂ reduction in HfO ₂/SiO₂/Si stacks

Abstract

All Science Journal Classification (ASJC) codes

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