Abstract
Heteroepitaxial growth of CaF2 films on (511)Si and GaAs films on CaF2/Si(511) structures is investigated. CaF2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measure-ments and replica transmission electron microscopy show that CaF2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 s after the growth at 550°C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF2/Si(511) structures. Differences in crystalline defects between GaAs films grown on (511) substrates and those on (100) substrates arc discussed based on results obtained from cross-sectional transmission electron microscopy.
| Original language | English |
|---|---|
| Pages (from-to) | 1784-1788 |
| Number of pages | 5 |
| Journal | Japanese journal of applied physics |
| Volume | 28 |
| Issue number | 10 R |
| DOIs | |
| Publication status | Published - Oct 1989 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)