TY - JOUR
T1 - Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition
AU - Tsubota, Toshiki
AU - Ohta, Masanari
AU - Kusakabe, Katsuki
AU - Morooka, Shigeharu
AU - Watanabe, Midori
AU - Maeda, Hideaki
N1 - Funding Information:
This study was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture, Japan, and the Project for Fundamental Engineering of CVD, organized by Professor Hiroshi Komiyama, The University of Tokyo.
PY - 2000/7/3
Y1 - 2000/7/3
N2 - An iridium (100) layer was epitaxially coated on a MgO (100) plate by sputtering at 1123 K, and was then utilized in the formation of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) using methane as the carbon source. The electric contact between the substrate and holder was confirmed by coating the entire MgO surface with iridium. The iridium substrate was then treated by bias-enhanced nucleation under optimized conditions. It was found that diamond particles formed by MPCVD were essentially oriented to the iridium substrate. The diamond particles were then grown to the 〈100〉 and further to the 〈111〉, and a smooth diamond film was obtained. The full width at half maximum of the (400) rocking curve of the diamond film was 0.16°, which was close to that of a diamond single crystal.
AB - An iridium (100) layer was epitaxially coated on a MgO (100) plate by sputtering at 1123 K, and was then utilized in the formation of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) using methane as the carbon source. The electric contact between the substrate and holder was confirmed by coating the entire MgO surface with iridium. The iridium substrate was then treated by bias-enhanced nucleation under optimized conditions. It was found that diamond particles formed by MPCVD were essentially oriented to the iridium substrate. The diamond particles were then grown to the 〈100〉 and further to the 〈111〉, and a smooth diamond film was obtained. The full width at half maximum of the (400) rocking curve of the diamond film was 0.16°, which was close to that of a diamond single crystal.
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U2 - 10.1016/S0925-9635(00)00263-6
DO - 10.1016/S0925-9635(00)00263-6
M3 - Article
AN - SCOPUS:0033705516
SN - 0925-9635
VL - 9
SP - 1380
EP - 1387
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 7
ER -