Heteroepitaxial growth of β-AIN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition

Tomohiro Yoshida; Yutaro Ueda; Takeshi Daio; Aki Tominaga; Toshihiro Okajima; Tsuyoshi Yoshitake

doi:10.7567/JJAP.54.06FJ05

Heteroepitaxial growth of β-AIN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition

Tomohiro Yoshida, Yutaro Ueda, Takeshi Daio, Aki Tominaga, Toshihiro Okajima, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

β-AIN thin films were heteroepitaxially grown on sapphire (0001) substrates with a smooth surface showing steps in nitrogen atmospheres by pulsed laser deposition using sintered AIN targets, and their films were structurally studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Horizontally oriented growth of β-AIN(111) was confirmed by XRD in 2θ-θ scan. The epitaxial relationship between β-AIN and sapphire was derived to be β-AIN(111)[121] || sapphire (0001)[1120] from the TEM measurement. The existence of dislocation defects was implied from the electron diffraction pattern of the film. The heteroepitaxial growth probably occurs in domain match epitaxy, accompanied by the generation of dislocations defects at the interface.

Original language	English
Article number	06FJ05
Journal	Japanese journal of applied physics
Volume	54
Issue number	6
DOIs	https://doi.org/10.7567/JJAP.54.06FJ05
Publication status	Published - Jun 1 2015

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.54.06FJ05

Cite this

@article{fd8022d39841404e803549cc11625224,

title = "Heteroepitaxial growth of β-AIN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition",

abstract = "β-AIN thin films were heteroepitaxially grown on sapphire (0001) substrates with a smooth surface showing steps in nitrogen atmospheres by pulsed laser deposition using sintered AIN targets, and their films were structurally studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Horizontally oriented growth of β-AIN(111) was confirmed by XRD in 2θ-θ scan. The epitaxial relationship between β-AIN and sapphire was derived to be β-AIN(111)[121] || sapphire (0001)[1120] from the TEM measurement. The existence of dislocation defects was implied from the electron diffraction pattern of the film. The heteroepitaxial growth probably occurs in domain match epitaxy, accompanied by the generation of dislocations defects at the interface.",

author = "Tomohiro Yoshida and Yutaro Ueda and Takeshi Daio and Aki Tominaga and Toshihiro Okajima and Tsuyoshi Yoshitake",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

year = "2015",

month = jun,

day = "1",

doi = "10.7567/JJAP.54.06FJ05",

language = "English",

volume = "54",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "6",

}

TY - JOUR

T1 - Heteroepitaxial growth of β-AIN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition

AU - Yoshida, Tomohiro

AU - Ueda, Yutaro

AU - Daio, Takeshi

AU - Tominaga, Aki

AU - Okajima, Toshihiro

AU - Yoshitake, Tsuyoshi

PY - 2015/6/1

Y1 - 2015/6/1

N2 - β-AIN thin films were heteroepitaxially grown on sapphire (0001) substrates with a smooth surface showing steps in nitrogen atmospheres by pulsed laser deposition using sintered AIN targets, and their films were structurally studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Horizontally oriented growth of β-AIN(111) was confirmed by XRD in 2θ-θ scan. The epitaxial relationship between β-AIN and sapphire was derived to be β-AIN(111)[121] || sapphire (0001)[1120] from the TEM measurement. The existence of dislocation defects was implied from the electron diffraction pattern of the film. The heteroepitaxial growth probably occurs in domain match epitaxy, accompanied by the generation of dislocations defects at the interface.

AB - β-AIN thin films were heteroepitaxially grown on sapphire (0001) substrates with a smooth surface showing steps in nitrogen atmospheres by pulsed laser deposition using sintered AIN targets, and their films were structurally studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Horizontally oriented growth of β-AIN(111) was confirmed by XRD in 2θ-θ scan. The epitaxial relationship between β-AIN and sapphire was derived to be β-AIN(111)[121] || sapphire (0001)[1120] from the TEM measurement. The existence of dislocation defects was implied from the electron diffraction pattern of the film. The heteroepitaxial growth probably occurs in domain match epitaxy, accompanied by the generation of dislocations defects at the interface.

UR - http://www.scopus.com/inward/record.url?scp=84930695152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930695152&partnerID=8YFLogxK

U2 - 10.7567/JJAP.54.06FJ05

DO - 10.7567/JJAP.54.06FJ05

M3 - Article

AN - SCOPUS:84930695152

SN - 0021-4922

VL - 54

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 6

M1 - 06FJ05

ER -

Heteroepitaxial growth of β-AIN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this