TY - JOUR
T1 - Heteroepitaxial (111) ZnGa2O4 Thin Films Grown on (00.1) Sapphire by Pulsed Laser Deposition
AU - Luo, Sijun
AU - Harrington, George F.
AU - Wu, Kuan Ting
AU - Lippert, Thomas
N1 - Funding Information:
The authors gratefully acknowledge the support of the International Institute for Carbon Neutral Energy Research (WPI-I2CNER), sponsored by the World Premier International Research Center Initiative (WPI), MEXT, Japan. G.F.H. gratefully acknowledges financial support from a Kakenhi Grant-in-Aid for Young Scientists (B) Award (no. JP18K13992) and the Platform of Inter/Transdisciplinary Energy Research Support Program (Q-pit) at Kyushu University. The authors greatly thank Dr. Daniele Pergolesi at PSI for helpful discussion and comments.
Funding Information:
The authors gratefully acknowledge the support of the International Institute for Carbon Neutral Energy Research (WPI‐I2CNER), sponsored by the World Premier International Research Center Initiative (WPI), MEXT, Japan. G.F.H. gratefully acknowledges financial support from a Kakenhi Grant‐in‐Aid for Young Scientists (B) Award (no. JP18K13992) and the Platform of Inter/Transdisciplinary Energy Research Support Program (Q‐pit) at Kyushu University. The authors greatly thank Dr. Daniele Pergolesi at PSI for helpful discussion and comments.
Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/9
Y1 - 2020/9
N2 - Heteroepitaxial ZnGa2O4 thin films grown on sapphire substrates would be preferable for fundamental studies on properties of this material for device applications. To achieve near-stoichiometric ZnGa2O4 epitaxial thin films by pulsed laser deposition (PLD), the severe loss of Zn must be overcome. Herein, the fabrication and characterization of epitaxial (111) ZnGa2O4 thin films grown on (00.1) sapphire substrates by PLD using a Zn0.97Ga0.03O target are reported. A deposition temperature of 750 °C and a laser fluence of 3.5 J cm−2 are suitable for growing near-stoichiometric ZnGa2O4 film. The in-plane orientation relationship is identified to be (Formula presented.) ZnGa2O4//[11.0] Al2O3. A 14.2 nm thick (111) ZnGa2O4 epitaxial thin film with a Zn/Ga atomic ratio of about 0.47 shows a narrow full width at half maximum value for the rocking curve of 0.1° and a direct optical bandgap of 4.9 eV.
AB - Heteroepitaxial ZnGa2O4 thin films grown on sapphire substrates would be preferable for fundamental studies on properties of this material for device applications. To achieve near-stoichiometric ZnGa2O4 epitaxial thin films by pulsed laser deposition (PLD), the severe loss of Zn must be overcome. Herein, the fabrication and characterization of epitaxial (111) ZnGa2O4 thin films grown on (00.1) sapphire substrates by PLD using a Zn0.97Ga0.03O target are reported. A deposition temperature of 750 °C and a laser fluence of 3.5 J cm−2 are suitable for growing near-stoichiometric ZnGa2O4 film. The in-plane orientation relationship is identified to be (Formula presented.) ZnGa2O4//[11.0] Al2O3. A 14.2 nm thick (111) ZnGa2O4 epitaxial thin film with a Zn/Ga atomic ratio of about 0.47 shows a narrow full width at half maximum value for the rocking curve of 0.1° and a direct optical bandgap of 4.9 eV.
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U2 - 10.1002/pssr.202000270
DO - 10.1002/pssr.202000270
M3 - Letter
AN - SCOPUS:85087308423
SN - 1862-6254
VL - 14
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 9
M1 - 2000270
ER -