Growth of thick AlN layer was performed directly on sapphire (0001) substrate at 1100°C by hydride vapor phase epitaxy (HVPE) using AlCl 3 and NH3 as source gases. Growth rate over 10 μm/h was demonstrated by increasing input partial pressure of AlCl3. Also, it was found that the growth rate was sensitive to NH3 input partial pressure (PNH3°), and decreased rapidly with increase of PNH3°. Edge dislocation density estimated from full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curves was independent of the growth rate.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics