Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy

T. Yamane; H. Murakami; Y. Kangawa; Y. Kumagai; A. Koukitu

doi:10.1002/pssc.200461551

Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy

T. Yamane, H. Murakami, Y. Kangawa, Y. Kumagai, A. Koukitu

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Abstract

Growth of thick AlN layer was performed directly on sapphire (0001) substrate at 1100°C by hydride vapor phase epitaxy (HVPE) using AlCl ₃ and NH₃ as source gases. Growth rate over 10 μm/h was demonstrated by increasing input partial pressure of AlCl₃. Also, it was found that the growth rate was sensitive to NH₃ input partial pressure (P_NH3^°), and decreased rapidly with increase of P_NH3^°. Edge dislocation density estimated from full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curves was independent of the growth rate.

Original language	English
Pages (from-to)	2062-2065
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200461551
Publication status	Published - 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200461551

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abstract = "Growth of thick AlN layer was performed directly on sapphire (0001) substrate at 1100°C by hydride vapor phase epitaxy (HVPE) using AlCl 3 and NH3 as source gases. Growth rate over 10 μm/h was demonstrated by increasing input partial pressure of AlCl3. Also, it was found that the growth rate was sensitive to NH3 input partial pressure (PNH3°), and decreased rapidly with increase of PNH3°. Edge dislocation density estimated from full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curves was independent of the growth rate.",

author = "T. Yamane and H. Murakami and Y. Kangawa and Y. Kumagai and A. Koukitu",

year = "2005",

doi = "10.1002/pssc.200461551",

language = "English",

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journal = "Physica Status Solidi C: Conferences",

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AU - Yamane, T.

AU - Murakami, H.

AU - Kangawa, Y.

AU - Kumagai, Y.

AU - Koukitu, A.

PY - 2005

Y1 - 2005

N2 - Growth of thick AlN layer was performed directly on sapphire (0001) substrate at 1100°C by hydride vapor phase epitaxy (HVPE) using AlCl 3 and NH3 as source gases. Growth rate over 10 μm/h was demonstrated by increasing input partial pressure of AlCl3. Also, it was found that the growth rate was sensitive to NH3 input partial pressure (PNH3°), and decreased rapidly with increase of PNH3°. Edge dislocation density estimated from full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curves was independent of the growth rate.

AB - Growth of thick AlN layer was performed directly on sapphire (0001) substrate at 1100°C by hydride vapor phase epitaxy (HVPE) using AlCl 3 and NH3 as source gases. Growth rate over 10 μm/h was demonstrated by increasing input partial pressure of AlCl3. Also, it was found that the growth rate was sensitive to NH3 input partial pressure (PNH3°), and decreased rapidly with increase of PNH3°. Edge dislocation density estimated from full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curves was independent of the growth rate.

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

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Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy

Abstract

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