Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF2/Si was suppressed by RTA process for planarization of facets on CaF2 surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F2/CaF2, was also effective, where single domain GaAs layers were obtained without the RTA process.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry