Growth of pyrochlore Bi2Ti2O7 epitaxial films and their electrical characterization

Muneyasu Suzuki; Takayuki Watanabe; Tadashi Takenaka; Hiroshi Funakubo

doi:10.1080/10584580490899082

Growth of pyrochlore Bi₂Ti₂O₇ epitaxial films and their electrical characterization

Muneyasu Suzuki, Takayuki Watanabe, Tadashi Takenaka, Hiroshi Funakubo

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Epitaxial growth condition of Bi₂Ti₂O₇ films on the substrates having rutile-structure was investigated. TiO ₂ single crystals and the conductive epitaxial IrO₂ layers having same rutile-structure were used as substrates for film deposition. Strongly (111)-oriented Bi₂Ti₂O₇ films were confirmed to be deposited on (110) TiO₂ substrates by XRD θ-2θ scans, but obvious orientations were not detected on (100), (001) and (110) TiO₂ substrates. The epitaxial growths of Bi ₂Ti₂O₇ films were confirmed on (100), (001) and (110) TiO₂ substrates, where two variants were observed on (100) and (110) TiO₂ substrates. The epitaxial relationships were confirmed as follows; (14 14 19)Bi₂Ti₂O₇//(100)TiO ₂, (112)Bi₂Ti₂O₇//(101)Ti _O2, and (111)Bi₂Ti₂O₇//(110)TiO ₂. Same epitaxial growth was confirmed only on (110)IrO ₂//(110)TiO₂ substrate, but not on (101)IrO ₂//(012)Al₂O₃ and (100)IrO₂//(100) TiO₂ substrates. The dielectric constant and loss tangent at 1 kHz were 130 and 2%, respectively for the 130 nm-thick epitaxial Bi ₂Ti₂O₇ film grown on(110)IrO ₂//(110)TiO₂ substrate.

Original language	English
Pages (from-to)	201-209
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	67
DOIs	https://doi.org/10.1080/10584580490899082
Publication status	Published - 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Ceramics and Composites
Materials Chemistry
Electrical and Electronic Engineering
Control and Systems Engineering

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10.1080/10584580490899082

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title = "Growth of pyrochlore Bi2Ti2O7 epitaxial films and their electrical characterization",

abstract = "Epitaxial growth condition of Bi2Ti2O7 films on the substrates having rutile-structure was investigated. TiO 2 single crystals and the conductive epitaxial IrO2 layers having same rutile-structure were used as substrates for film deposition. Strongly (111)-oriented Bi2Ti2O7 films were confirmed to be deposited on (110) TiO2 substrates by XRD θ-2θ scans, but obvious orientations were not detected on (100), (001) and (110) TiO2 substrates. The epitaxial growths of Bi 2Ti2O7 films were confirmed on (100), (001) and (110) TiO2 substrates, where two variants were observed on (100) and (110) TiO2 substrates. The epitaxial relationships were confirmed as follows; (14 14 19)Bi2Ti2O7//(100)TiO 2, (112)Bi2Ti2O7//(101)Ti O2, and (111)Bi2Ti2O7//(110)TiO 2. Same epitaxial growth was confirmed only on (110)IrO 2//(110)TiO2 substrate, but not on (101)IrO 2//(012)Al2O3 and (100)IrO2//(100) TiO2 substrates. The dielectric constant and loss tangent at 1 kHz were 130 and 2%, respectively for the 130 nm-thick epitaxial Bi 2Ti2O7 film grown on(110)IrO 2//(110)TiO2 substrate.",

author = "Muneyasu Suzuki and Takayuki Watanabe and Tadashi Takenaka and Hiroshi Funakubo",

year = "2004",

doi = "10.1080/10584580490899082",

language = "English",

volume = "67",

pages = "201--209",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

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TY - JOUR

T1 - Growth of pyrochlore Bi2Ti2O7 epitaxial films and their electrical characterization

AU - Suzuki, Muneyasu

AU - Watanabe, Takayuki

AU - Takenaka, Tadashi

AU - Funakubo, Hiroshi

PY - 2004

Y1 - 2004

N2 - Epitaxial growth condition of Bi2Ti2O7 films on the substrates having rutile-structure was investigated. TiO 2 single crystals and the conductive epitaxial IrO2 layers having same rutile-structure were used as substrates for film deposition. Strongly (111)-oriented Bi2Ti2O7 films were confirmed to be deposited on (110) TiO2 substrates by XRD θ-2θ scans, but obvious orientations were not detected on (100), (001) and (110) TiO2 substrates. The epitaxial growths of Bi 2Ti2O7 films were confirmed on (100), (001) and (110) TiO2 substrates, where two variants were observed on (100) and (110) TiO2 substrates. The epitaxial relationships were confirmed as follows; (14 14 19)Bi2Ti2O7//(100)TiO 2, (112)Bi2Ti2O7//(101)Ti O2, and (111)Bi2Ti2O7//(110)TiO 2. Same epitaxial growth was confirmed only on (110)IrO 2//(110)TiO2 substrate, but not on (101)IrO 2//(012)Al2O3 and (100)IrO2//(100) TiO2 substrates. The dielectric constant and loss tangent at 1 kHz were 130 and 2%, respectively for the 130 nm-thick epitaxial Bi 2Ti2O7 film grown on(110)IrO 2//(110)TiO2 substrate.

AB - Epitaxial growth condition of Bi2Ti2O7 films on the substrates having rutile-structure was investigated. TiO 2 single crystals and the conductive epitaxial IrO2 layers having same rutile-structure were used as substrates for film deposition. Strongly (111)-oriented Bi2Ti2O7 films were confirmed to be deposited on (110) TiO2 substrates by XRD θ-2θ scans, but obvious orientations were not detected on (100), (001) and (110) TiO2 substrates. The epitaxial growths of Bi 2Ti2O7 films were confirmed on (100), (001) and (110) TiO2 substrates, where two variants were observed on (100) and (110) TiO2 substrates. The epitaxial relationships were confirmed as follows; (14 14 19)Bi2Ti2O7//(100)TiO 2, (112)Bi2Ti2O7//(101)Ti O2, and (111)Bi2Ti2O7//(110)TiO 2. Same epitaxial growth was confirmed only on (110)IrO 2//(110)TiO2 substrate, but not on (101)IrO 2//(012)Al2O3 and (100)IrO2//(100) TiO2 substrates. The dielectric constant and loss tangent at 1 kHz were 130 and 2%, respectively for the 130 nm-thick epitaxial Bi 2Ti2O7 film grown on(110)IrO 2//(110)TiO2 substrate.

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JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

ER -

Growth of pyrochlore Bi₂Ti₂O₇ epitaxial films and their electrical characterization

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