Growth of MnGeP2 thin films by molecular beam epitaxy

Kazuyuki Minami, Jumpei Jogo, Valery Smirnov, Hideki Yuasa, Toshikazu Nagatsuka, Takayuki Ishibashi, Yoshitaka Morishita, Yuriko Matsuo, Yoshihiro Kangawa, Akinori Koukitu, Katsuaki Sato

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4 Citations (Scopus)


Epitaxial growth of the Mn-containing novel ternary compound MnGeP 2 has been investigated. Prior to the growth experiments, theoretical studies using an ab initio calculation were carried out, on the basis of which the stable existence of MnGeP2: with a chalcopyrite structure was predicted. Growth experiments of Mn-Ge-P were performed on GaAs(001) and InP(001) substrates using a molecular beam epitaxy (MBE) technique, in which Mn and Ge were supplied from solid sources and P from a tertiary butyl phosphine (TBP) gas source. The optimum growth condition has been estimated on the basis of X-ray diffraction studies. Oriented overgrowth of MnGeP2 was confirmed from a reciprocal lattice mapping (RLM) on X-ray diffraction (XRD) analyses, and lattice constants have been determined to be a = 0.569 nm and c = 1.13 nm based on the assumption that the material has a tetragonal crystal structure,

Original languageEnglish
Pages (from-to)L265-L267
JournalJapanese Journal of Applied Physics
Issue number8-11
Publication statusPublished - 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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