Growth of manganese silicide layers on Si substrates using MnCl 2 source

Hu Junhua, Takanori Kurokawa, Takashi Suemasu, Shogo Takahara, Masaru Itakura, Hirokazu Tatsuoka

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Manganese silicide layers were grown on Si(111) substrates by exposure of the Si substrates to MnCl 2 vapor. The thermal treatment temperature of 500°C provided the appropriate growth conditions to form the Mn xSi y(y/x - 2) similar to MnSi 1.7 phase. The epitaxial Mn xSi y(y/x-2) islands grew during the initial growth stage. As the heat treatment time increased, the epitaxial layer became continuous and covered the entire Si(111) substrate surface at the appropriate heat treatment temperature of 500°C, even though the additional growth of the Mn xSi y(y/x - 1) deposit similar to MnSi phase occurred when the thickness of Mn-silicide layers exceeded the limited layer thickness. These results encouraged us to grow large area Mn xSi yy/x - 2) layers on Si substrates using this simple growth technique.

Original languageEnglish
Pages (from-to)233-237
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number2
Publication statusPublished - Feb 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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