TY - JOUR
T1 - Growth of GdBa2Cu3Oy films prepared by BaF2 process without water vapor
AU - Kita, R.
AU - Nakamura, T.
AU - Ichinose, A.
AU - Miura, O.
AU - Matsumoto, K.
AU - Yoshida, Y.
AU - Mukaida, M.
AU - Horii, S.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/9/10
Y1 - 2007/9/10
N2 - We have investigated the influences of the heating rate and film thickness on the growth of GdBa2Cu3Oy, (GBCO) thin films prepared by the BaF2 ex-situ process without water vapor. Critical current density (Jc) and surface morphology of the GBCO films were improved by increasing the heating rate during growth from 30 to 50°C/min. The GBCO films prepared by the heating rate of 50°C/min had the maximum Jc of 2.1 MA/cm2. The Jc value of the GBCO films was about 2 MA/cm2 up to 200 nm, and decreased to 0.92 MA/cm2 at 400 nm.
AB - We have investigated the influences of the heating rate and film thickness on the growth of GdBa2Cu3Oy, (GBCO) thin films prepared by the BaF2 ex-situ process without water vapor. Critical current density (Jc) and surface morphology of the GBCO films were improved by increasing the heating rate during growth from 30 to 50°C/min. The GBCO films prepared by the heating rate of 50°C/min had the maximum Jc of 2.1 MA/cm2. The Jc value of the GBCO films was about 2 MA/cm2 up to 200 nm, and decreased to 0.92 MA/cm2 at 400 nm.
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U2 - 10.1142/S0217984907013705
DO - 10.1142/S0217984907013705
M3 - Article
AN - SCOPUS:34548714141
SN - 0217-9849
VL - 21
SP - 1377
EP - 1382
JO - Modern Physics Letters B
JF - Modern Physics Letters B
IS - 21
ER -