Growth of BaSnO3 doped ErBa2Cu3O 7-δ Thin Films on MgO Substrates for High Jc Applications

Masashi Mukaida; Shuhei Yasunaga; Ryo Teranishi; Nobuyuki Mori; Ataru Ichinose; Shigeru Horii; Kaname Matsumoto; Yutaka Yoshida; Ryusuke Kita

doi:10.1109/TASC.2009.2018418

Growth of BaSnO₃ doped ErBa₂Cu₃O ₇-δ Thin Films on MgO Substrates for High J_c Applications

Masashi Mukaida, Shuhei Yasunaga, Ryo Teranishi, Nobuyuki Mori, Ataru Ichinose, Shigeru Horii, Kaname Matsumoto, Yutaka Yoshida, Ryusuke Kita

Research output: Contribution to journal › Article › peer-review

Abstract

We compared J_c properties of i) Pure ErBa₂Cu ₃O_7-δ films on BaZrO₃ buffered MgO substrates, ii) Pure ErBa₂Cu₃O_7-δ films on SrTiO₃ substrates, iii) BaSnO₃ doped ErBa ₂Cu₃O_7-δ ilms on SrTiO₃ substrates, and iv) BaSnO₃ doped ErBa₂Cu₃O _7-δ films on BaSnO₃ buffered MgO substrates. The lowest J_c was obtained from pure ErBa₂Cu₃O _7-δ films on SrTiO₃ substrates because of low dislocation densities, c-axis correlated pinning properties are obtained from pure ErBa₂Cu₃O_7-δ films on BaSnO ₃ buffered MgO substrates indicating there exist dislocations along the c-axis of the films. The highest J_c was obtained from BaSnO ₃ doped ErBa₂Cu₃O_7-δ films on SrTiO₃ substrates. Almost the same J_c was obtained from BaSnO₃ doped ErBa₂Cu₃O_7-δ films on BaSnO₃ buffered MgO substrates. 2wt% BaSnO₃ doping into ErBa₂Cu₃O_7-δ films on BaSnO₃ buffered MgO substrates are very effective to enhance J _cs of the films at a high magnetic field.

Original language	English
Article number	5152913
Pages (from-to)	3416-3419
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	19
Issue number	3
DOIs	https://doi.org/10.1109/TASC.2009.2018418
Publication status	Published - Jun 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TASC.2009.2018418

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@article{78ced52754084fdb858a6274b93a8cfa,

title = "Growth of BaSnO3 doped ErBa2Cu3O 7-δ Thin Films on MgO Substrates for High Jc Applications",

abstract = "We compared Jc properties of i) Pure ErBa2Cu 3O7-δ films on BaZrO3 buffered MgO substrates, ii) Pure ErBa2Cu3O7-δ films on SrTiO3 substrates, iii) BaSnO3 doped ErBa 2Cu3O7-δ ilms on SrTiO3 substrates, and iv) BaSnO3 doped ErBa2Cu3O 7-δ films on BaSnO3 buffered MgO substrates. The lowest Jc was obtained from pure ErBa2Cu3O 7-δ films on SrTiO3 substrates because of low dislocation densities, c-axis correlated pinning properties are obtained from pure ErBa2Cu3O7-δ films on BaSnO 3 buffered MgO substrates indicating there exist dislocations along the c-axis of the films. The highest Jc was obtained from BaSnO 3 doped ErBa2Cu3O7-δ films on SrTiO3 substrates. Almost the same Jc was obtained from BaSnO3 doped ErBa2Cu3O7-δ films on BaSnO3 buffered MgO substrates. 2wt% BaSnO3 doping into ErBa2Cu3O7-δ films on BaSnO3 buffered MgO substrates are very effective to enhance J cs of the films at a high magnetic field.",

author = "Masashi Mukaida and Shuhei Yasunaga and Ryo Teranishi and Nobuyuki Mori and Ataru Ichinose and Shigeru Horii and Kaname Matsumoto and Yutaka Yoshida and Ryusuke Kita",

note = "Funding Information: The authors thank the Japan Science and Technology Agency for supporting the research.",

year = "2009",

month = jun,

doi = "10.1109/TASC.2009.2018418",

language = "English",

volume = "19",

pages = "3416--3419",

journal = "IEEE Transactions on Applied Superconductivity",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Growth of BaSnO3 doped ErBa2Cu3O 7-δ Thin Films on MgO Substrates for High Jc Applications

AU - Mukaida, Masashi

AU - Yasunaga, Shuhei

AU - Teranishi, Ryo

AU - Mori, Nobuyuki

AU - Ichinose, Ataru

AU - Horii, Shigeru

AU - Matsumoto, Kaname

AU - Yoshida, Yutaka

AU - Kita, Ryusuke

N1 - Funding Information: The authors thank the Japan Science and Technology Agency for supporting the research.

PY - 2009/6

Y1 - 2009/6

N2 - We compared Jc properties of i) Pure ErBa2Cu 3O7-δ films on BaZrO3 buffered MgO substrates, ii) Pure ErBa2Cu3O7-δ films on SrTiO3 substrates, iii) BaSnO3 doped ErBa 2Cu3O7-δ ilms on SrTiO3 substrates, and iv) BaSnO3 doped ErBa2Cu3O 7-δ films on BaSnO3 buffered MgO substrates. The lowest Jc was obtained from pure ErBa2Cu3O 7-δ films on SrTiO3 substrates because of low dislocation densities, c-axis correlated pinning properties are obtained from pure ErBa2Cu3O7-δ films on BaSnO 3 buffered MgO substrates indicating there exist dislocations along the c-axis of the films. The highest Jc was obtained from BaSnO 3 doped ErBa2Cu3O7-δ films on SrTiO3 substrates. Almost the same Jc was obtained from BaSnO3 doped ErBa2Cu3O7-δ films on BaSnO3 buffered MgO substrates. 2wt% BaSnO3 doping into ErBa2Cu3O7-δ films on BaSnO3 buffered MgO substrates are very effective to enhance J cs of the films at a high magnetic field.

AB - We compared Jc properties of i) Pure ErBa2Cu 3O7-δ films on BaZrO3 buffered MgO substrates, ii) Pure ErBa2Cu3O7-δ films on SrTiO3 substrates, iii) BaSnO3 doped ErBa 2Cu3O7-δ ilms on SrTiO3 substrates, and iv) BaSnO3 doped ErBa2Cu3O 7-δ films on BaSnO3 buffered MgO substrates. The lowest Jc was obtained from pure ErBa2Cu3O 7-δ films on SrTiO3 substrates because of low dislocation densities, c-axis correlated pinning properties are obtained from pure ErBa2Cu3O7-δ films on BaSnO 3 buffered MgO substrates indicating there exist dislocations along the c-axis of the films. The highest Jc was obtained from BaSnO 3 doped ErBa2Cu3O7-δ films on SrTiO3 substrates. Almost the same Jc was obtained from BaSnO3 doped ErBa2Cu3O7-δ films on BaSnO3 buffered MgO substrates. 2wt% BaSnO3 doping into ErBa2Cu3O7-δ films on BaSnO3 buffered MgO substrates are very effective to enhance J cs of the films at a high magnetic field.

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JO - IEEE Transactions on Applied Superconductivity

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Growth of BaSnO₃ doped ErBa₂Cu₃O ₇-δ Thin Films on MgO Substrates for High J_c Applications

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