Growth of AgGaSe2 crystals by hot-press method

A. Kinoshita, H. Matsuo, K. Yoshimrao, T. Ikari, K. Kakimoto

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)

Abstract

Undoped polycrystalline AgGaSe2 crystals were successfully grown at a low temperature (700°C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The grain size was approximately 55 nm. The presence of lattice defects such as Se vacancies and/or Ag interstitials may lead to an enhancement in electrical conductivity.

Original languageEnglish
Pages (from-to)2903-2906
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
Issue number8
DOIs
Publication statusPublished - 2006
Event15th International Conference on Ternary and Multinary Compounds, ICTMC-15 - Kyoto, Japan
Duration: Mar 6 2006Mar 10 2006

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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