Growth of 3C-SiC/Si multilayer heterostructures by supersonic free jets

Y. Ikoma, T. Endo, T. Tada, F. Watanabe, T. Motooka

    Research output: Contribution to journalConference articlepeer-review


    We have investigated growths of 3C-SiC/Si multilayer heterostructures on Si(100) by supersonic free jet CVD. CH3SiH3 and Si3H8 gas jets were used for 3C-SiC and Si layer growth, respectively. The crystal quality of Si layers on 3C-SiC/Si(100) was found to strongly depend on the 3C-SiC surface roughness. Polycrystalline Si was grown on rough 3C-SiC layers with a thickness of 9 nm, while epitaxial Si was grown by using ultrathin (≈3 nm) 3C-SiC layers with smooth surfaces. Epitaxial 3C-SiC/Si/3C-SiC/Si(100) heterostructures were successfully obtained on ultrathin 3C-SiC/Si(100).

    Original languageEnglish
    Pages (from-to)265-268
    JournalMaterials Science Forum
    Publication statusPublished - 2000
    EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
    Duration: Oct 10 1999Oct 15 1999

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering


    Dive into the research topics of 'Growth of 3C-SiC/Si multilayer heterostructures by supersonic free jets'. Together they form a unique fingerprint.

    Cite this