Growth mechanisms of GaN quantum dots and their optical properties

Satoru Tanaka, Peter Ramvall, Shintaro Nomura, Hideki Hirayama, Yoshinobu Aoyagi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


This paper describes the fabrication of quantum dots of GaN, a typical III-V nitride group semiconductor. On investigating GaN growth on the AlGaN mixed crystal surface to be used as a optical and electron confinement layer for device applications, it is found that two-dimensional step flow growth mode can be changed to three-dimensional growth mode by Si supply. This phenomenon is proposed to be effective for fabrication of GaN quantum dots. From the growth kinetics or the energy point of view, Si functions to prevent GaN step flow growth on the AlGaN surface. Furthermore, the free energy on the AlGaN surface is varied by additions of Si. The optical characteristics of GaN quantum dots are evaluated by the photoluminescence method. The dependence of the emission energy from GaN quantum dots on the dot size is confirmed. A laser structure was fabricated and stimulated emission was observed by optical pumping.

Original languageEnglish
Pages (from-to)20-26
Number of pages7
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Issue number6
Publication statusPublished - Jun 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy
  • Computer Networks and Communications
  • Electrical and Electronic Engineering


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