TY - JOUR
T1 - Growth mechanism of YBCO films in metal organic deposition method using trifluoroacetates
AU - Honjo, Tetsuji
AU - Nakamura, Yuichi
AU - Teranishi, Ryo
AU - Fuji, Hiroshi
AU - Shibata, Junko
AU - Izumi, Teruo
AU - Shiohara, Yuh
N1 - Funding Information:
Manuscript received August 5, 2002. This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) as Collaborative Research and Development of Fundamental Technologies for Superconductivity Applications.
PY - 2003/6
Y1 - 2003/6
N2 - We report the theoretical analysis of YBCO growth during post annealing in the TFA-MOD process considering both the diffusion in the boundary layer and the growth kinetics at the precursor/YBCO interface. As a result, we could obtain the analytical solution of the growth rate of YBCO. Subsequently, the unknown parameters in this solution were evaluated by the experimental measurements of the growth rate. The experimental results of the growth rate showed that it was independent of the film thickness and proportional to the square root of the water vapor pressure. These results suggested that the mass transfer in the gas boundary layer limited the growth rate. This model reveals a basic idea of the mechanism to determine the steady state growth rate, and could explain the experimental results. In addition, it predicts that the growth rate can be estimated from the water vapor pressure of the inlet gas. Consequently, it was confirmed that this growth model is effective for understanding of the growth kinetics in the TFA-MOD process.
AB - We report the theoretical analysis of YBCO growth during post annealing in the TFA-MOD process considering both the diffusion in the boundary layer and the growth kinetics at the precursor/YBCO interface. As a result, we could obtain the analytical solution of the growth rate of YBCO. Subsequently, the unknown parameters in this solution were evaluated by the experimental measurements of the growth rate. The experimental results of the growth rate showed that it was independent of the film thickness and proportional to the square root of the water vapor pressure. These results suggested that the mass transfer in the gas boundary layer limited the growth rate. This model reveals a basic idea of the mechanism to determine the steady state growth rate, and could explain the experimental results. In addition, it predicts that the growth rate can be estimated from the water vapor pressure of the inlet gas. Consequently, it was confirmed that this growth model is effective for understanding of the growth kinetics in the TFA-MOD process.
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U2 - 10.1109/TASC.2003.811836
DO - 10.1109/TASC.2003.811836
M3 - Conference article
AN - SCOPUS:0042967810
SN - 1051-8223
VL - 13
SP - 2516
EP - 2519
JO - IEEE Transactions on Applied Superconductivity
JF - IEEE Transactions on Applied Superconductivity
IS - 2 III
T2 - 2002 Applied Superconductivity Conference
Y2 - 4 August 2002 through 9 August 2002
ER -