@inproceedings{c5bfae9a56de46b09f6275930a5dddd7,
title = "Growth-direction dependent rapid-melting-growth of Ge-on-Insulator (GOI) and its application to Ge mesh-growth",
abstract = "Single crystal Ge-on-insulator (GOI) structures with various crystal orientations are necessary for realization of advanced high-speed and multi-functional devices. SiGe mixing triggered rapid-melting-growth of GOI is investigated as a function of seed-orientations and growth-directions. Single crystal growth of (100)-Ge strips is possible for all growth directions using (100)-oriented Si-seeds. However, rotational-growth is observed for some directions when Si-seeds with (110) and (111) orientations are employed. Such rotational-growth is completely suppressed by selecting the growth-directions deviating from the 〈111〉 direction by more than 35°. Based on this finding, growth of large mesh-patterned Ge layers with (100), (110), and (111) orientations are demonstrated.",
author = "H. Yokoyama and Y. Ohta and K. Toko and T. Sadoh and M. Miyao",
year = "2011",
doi = "10.1149/1.3570777",
language = "English",
isbn = "9781566778664",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "55--60",
booktitle = "Advanced Semiconductor-on-Insulator Technology and Related Physics 15",
edition = "5",
}