Growth and evaluation of high quality SiC crystal by sublimation method

Naoki Oyanagi, Hirotaka Yamaguchi, Tomohisa Kato, Shin Ichi Nishizawa, Kazuo Arai

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


High quality 6H-SiC single crystal was grown using the modified Lely method under pressure-controlled low-growth-rate conditions. The grown crystal contained no micropipes and its etch pit density was 4 × 103 cm-2. The presence of a Pendellösung fringe as revealed by section topography showed that the grown crystal was composed of a single domain. The relation between etch pits and defects is also discussed.

Original languageEnglish
Pages (from-to)87-90
Number of pages4
JournalMaterials Science Forum
Issue number1
Publication statusPublished - 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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