Growth and evaluation of high quality SiC crystal by sublimation method

Naoki Oyanagi; Hirotaka Yamaguchi; Tomohisa Kato; Shin Ichi Nishizawa; Kazuo Arai

doi:10.4028/www.scientific.net/msf.389-393.87

Growth and evaluation of high quality SiC crystal by sublimation method

Naoki Oyanagi, Hirotaka Yamaguchi, Tomohisa Kato, Shin Ichi Nishizawa, Kazuo Arai

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

High quality 6H-SiC single crystal was grown using the modified Lely method under pressure-controlled low-growth-rate conditions. The grown crystal contained no micropipes and its etch pit density was 4 × 10³ cm^-2. The presence of a Pendellösung fringe as revealed by section topography showed that the grown crystal was composed of a single domain. The relation between etch pits and defects is also discussed.

Original language	English
Pages (from-to)	87-90
Number of pages	4
Journal	Materials Science Forum
Volume	389-393
Issue number	1
DOIs	https://doi.org/10.4028/www.scientific.net/msf.389-393.87
Publication status	Published - 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

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abstract = "High quality 6H-SiC single crystal was grown using the modified Lely method under pressure-controlled low-growth-rate conditions. The grown crystal contained no micropipes and its etch pit density was 4 × 103 cm-2. The presence of a Pendell{\"o}sung fringe as revealed by section topography showed that the grown crystal was composed of a single domain. The relation between etch pits and defects is also discussed.",

author = "Naoki Oyanagi and Hirotaka Yamaguchi and Tomohisa Kato and Nishizawa, {Shin Ichi} and Kazuo Arai",

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T1 - Growth and evaluation of high quality SiC crystal by sublimation method

AU - Oyanagi, Naoki

AU - Yamaguchi, Hirotaka

AU - Kato, Tomohisa

AU - Nishizawa, Shin Ichi

AU - Arai, Kazuo

PY - 2002

Y1 - 2002

N2 - High quality 6H-SiC single crystal was grown using the modified Lely method under pressure-controlled low-growth-rate conditions. The grown crystal contained no micropipes and its etch pit density was 4 × 103 cm-2. The presence of a Pendellösung fringe as revealed by section topography showed that the grown crystal was composed of a single domain. The relation between etch pits and defects is also discussed.

AB - High quality 6H-SiC single crystal was grown using the modified Lely method under pressure-controlled low-growth-rate conditions. The grown crystal contained no micropipes and its etch pit density was 4 × 103 cm-2. The presence of a Pendellösung fringe as revealed by section topography showed that the grown crystal was composed of a single domain. The relation between etch pits and defects is also discussed.

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ER -

Growth and evaluation of high quality SiC crystal by sublimation method

Abstract

All Science Journal Classification (ASJC) codes

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