Growth and electrical properties of 3C-SiC/nanocrystalline diamond layered films

Akira Koga, Kungen Teii, Masaki Goto, Kazuhiro Yamada, Yoshimine Kato

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3 Citations (Scopus)


Cubic silicon carbide (3C-SiC)/nitrogen-incorporated nanocrystalline diamond layered films are prepared on p-type Si(100) substrates by carbonization and chemical vapor deposition in moderate-pressure microwave plasmas. X-ray diffraction, cross-sectional transmission electron microscopy, and energy dispersive X-ray spectroscopy reveal that epitaxial 3C-SiC thin layers about 10 nm thick with very high phase-purity are grown at the interface of Si and nanocrystalline diamond. The infrared absorption coefficient for the 3C-SiC layer is estimated to be around 420000 cm-1. The p-Si/3C-SiC/n- nanocrystalline diamond junction in a diode configuration shows rectification in the current-voltage measurement. Structural defects and surface roughening of the SiC layers are highly responsible for increasing the reverse leakage current and thus lowering the diode performance.

Original languageEnglish
Article number01AB08
JournalJapanese journal of applied physics
Issue number1 PART 2
Publication statusPublished - Jan 2011

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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