TY - GEN
T1 - Graphene-ZnO NWs Film for Large-Area UV Photodetector
AU - Liu, Fengyuan
AU - Yogeswaran, Nivasan
AU - Núñez, Carlos García
AU - Gregory, Duncan
AU - Dahiya, Ravinder
N1 - Funding Information:
This work was supported in part by the EPSRC Engineering Fellowship for Growth-PRINTSKIN (EP/M002527/1).
Publisher Copyright:
© 2018 IEEE.
PY - 2018/12/26
Y1 - 2018/12/26
N2 - This work demonstrates large-area ( 4cm 2 ) UV photodetector by heterogenous integration of graphene-ZnO nanowires (NWs) using a facile and cost-effective method. Owing to the low and wavelength-independent light absorption, it is difficult to obtain high-performance graphene-based photodetector (PD). The research presented here addresses this challenge by integrating light sensitive material (ZnO) on graphene. The huge sensitivity of ZnO NWs to UV light, combined with the high carrier mobility of graphene, enable the UV PD with a photoresponse up to 2100 A/W, and fast response times down to millisecond.
AB - This work demonstrates large-area ( 4cm 2 ) UV photodetector by heterogenous integration of graphene-ZnO nanowires (NWs) using a facile and cost-effective method. Owing to the low and wavelength-independent light absorption, it is difficult to obtain high-performance graphene-based photodetector (PD). The research presented here addresses this challenge by integrating light sensitive material (ZnO) on graphene. The huge sensitivity of ZnO NWs to UV light, combined with the high carrier mobility of graphene, enable the UV PD with a photoresponse up to 2100 A/W, and fast response times down to millisecond.
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U2 - 10.1109/ICSENS.2018.8589639
DO - 10.1109/ICSENS.2018.8589639
M3 - Conference contribution
AN - SCOPUS:85060895572
T3 - Proceedings of IEEE Sensors
BT - 2018 IEEE SENSORS, SENSORS 2018 - Conference Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th IEEE SENSORS Conference, SENSORS 2018
Y2 - 28 October 2018 through 31 October 2018
ER -