Graphene-based deep-ultraviolet photodetectors with ultrahigh responsivity using chemical vapor deposition of hexagonal boron nitride to achieve photogating

Shoichiro Fukushima, Satoru Fukamachi, Masaaki Shimatani, Kenji Kawahara, Hiroki Ago, Shinpei Ogawa

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

This study presents high-responsivity graphene-based deep-ultraviolet (DUV) photodetectors using chemical vapor deposition (CVD)-hexagonal boron nitride (h-BN) photogating. To improve the DUV photoresponse, h-BN was used as a photosensitizer in graphene field-effect transistors (GFETs). The h-BN photosensitizers were synthesized using CVD and then transferred onto a SiO2/Si substrate. The behavior of h-BN irradiated with DUV light was investigated using cathodoluminescence and UV–VIS reflectance. Under 260 nm light, it exhibited a clear photoresponse with an ultrahigh responsivity of 19600 AW−1, which was 460% higher than a GFET device without h-BN photosensitizers. A noise equivalent power of 3.09×10−13 W/Hz1/2 was achieved.

Original languageEnglish
Pages (from-to)2090-2101
Number of pages12
JournalOptical Materials Express
Volume12
Issue number5
DOIs
Publication statusPublished - May 1 2022

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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