Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth

Koichi Kakimoto; Lijun Liu

doi:10.1002/9783527623440.ch7

Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth

Koichi Kakimoto, Lijun Liu

Division of Renewable Energy Dynamics

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Original language	English
Title of host publication	Crystal Growth Technology
Subtitle of host publication	From Fundamentals and Simulation to Large-scale Production
Publisher	Wiley - VCH Verlag GmbH & CO. KGaA
Pages	195-204
Number of pages	10
ISBN (Print)	9783527317622
DOIs	https://doi.org/10.1002/9783527623440.ch7
Publication status	Published - Nov 25 2008

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/9783527623440.ch7

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Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth. / Kakimoto, Koichi; Liu, Lijun.
Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production. Wiley - VCH Verlag GmbH & CO. KGaA, 2008. p. 195-204.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

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Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth

All Science Journal Classification (ASJC) codes

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