Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and rapid-melting-growth in solid-liquid coexisting region

Ryo Matsumura; Ryusuke Kato; Yuki Tojo; Masashi Kurosawa; Taizoh Sadoh; Masanobu Miyao

doi:10.1149/2.003405ssl

Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and rapid-melting-growth in solid-liquid coexisting region

Ryo Matsumura, Ryusuke Kato, Yuki Tojo, Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Formation of SiGe crystals with large-grain on insulating-substrates is desired to achieve high-speed thin-film-transistors (TFT). We examine rapid-thermal annealing (950-1100°C) of a-Si_0.15Ge_0.85-stripe (2-15-μm-stripe-width) on insulator structures in solid-liquid-coexisting temperature-region. Formation of Si-rich micro-crystal-nuclei during annealing is clearly evidenced, where Si concentration and areal-density of micro-crystals are uniquely determined by annealing-temperature. Such self-organized-seeding enables lateral rapid-melting-growth from micro-crystals during cooling. The micro-crystals density per-unit-length is proportional to stripe-width, which results in enlargement of lateral-growth-length by narrowing stripe-width. Consequently, giant-lateral-growth of SiGe grains (∼300-μm-length, 0-40%-Si-concentration) are achieved for narrow-stripe-width of 2 μm at 1050°C. This technique facilitates advanced TFT for high-performance system-in-displays.

Original language	English
Pages (from-to)	P61-P64
Journal	ECS Solid State Letters
Volume	3
Issue number	5
DOIs	https://doi.org/10.1149/2.003405ssl
Publication status	Published - 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{79d824b46d8a4767a5124c5204ebed35,

title = "Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and rapid-melting-growth in solid-liquid coexisting region",

abstract = "Formation of SiGe crystals with large-grain on insulating-substrates is desired to achieve high-speed thin-film-transistors (TFT). We examine rapid-thermal annealing (950-1100°C) of a-Si0.15Ge0.85-stripe (2-15-μm-stripe-width) on insulator structures in solid-liquid-coexisting temperature-region. Formation of Si-rich micro-crystal-nuclei during annealing is clearly evidenced, where Si concentration and areal-density of micro-crystals are uniquely determined by annealing-temperature. Such self-organized-seeding enables lateral rapid-melting-growth from micro-crystals during cooling. The micro-crystals density per-unit-length is proportional to stripe-width, which results in enlargement of lateral-growth-length by narrowing stripe-width. Consequently, giant-lateral-growth of SiGe grains (∼300-μm-length, 0-40%-Si-concentration) are achieved for narrow-stripe-width of 2 μm at 1050°C. This technique facilitates advanced TFT for high-performance system-in-displays.",

author = "Ryo Matsumura and Ryusuke Kato and Yuki Tojo and Masashi Kurosawa and Taizoh Sadoh and Masanobu Miyao",

note = "Funding Information: A part of this work was supported by a Grant-in-Aid (24656209) for Scientific Research from the Ministry of Education, Culture, Sport, Science, and Technology in Japan. The authors wish to thank Dr. I. Mizushima of Toshiba Corporation for stimulating discussions during the course of this study, and Prof. T. Asano of Kyushu University for providing opportunity of the use of EBSD analysis system. M. K. wishes to thank JSPS research program for young scientists. Publisher Copyright: {\textcopyright} 2014 The Electrochemical Society. All rights reserved.",

year = "2014",

doi = "10.1149/2.003405ssl",

language = "English",

volume = "3",

pages = "P61--P64",

journal = "ECS Solid State Letters",

issn = "2162-8742",

publisher = "The Electrochemical Society",

number = "5",

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T1 - Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and rapid-melting-growth in solid-liquid coexisting region

AU - Matsumura, Ryo

AU - Kato, Ryusuke

AU - Tojo, Yuki

AU - Kurosawa, Masashi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

N1 - Funding Information: A part of this work was supported by a Grant-in-Aid (24656209) for Scientific Research from the Ministry of Education, Culture, Sport, Science, and Technology in Japan. The authors wish to thank Dr. I. Mizushima of Toshiba Corporation for stimulating discussions during the course of this study, and Prof. T. Asano of Kyushu University for providing opportunity of the use of EBSD analysis system. M. K. wishes to thank JSPS research program for young scientists. Publisher Copyright: © 2014 The Electrochemical Society. All rights reserved.

PY - 2014

Y1 - 2014

N2 - Formation of SiGe crystals with large-grain on insulating-substrates is desired to achieve high-speed thin-film-transistors (TFT). We examine rapid-thermal annealing (950-1100°C) of a-Si0.15Ge0.85-stripe (2-15-μm-stripe-width) on insulator structures in solid-liquid-coexisting temperature-region. Formation of Si-rich micro-crystal-nuclei during annealing is clearly evidenced, where Si concentration and areal-density of micro-crystals are uniquely determined by annealing-temperature. Such self-organized-seeding enables lateral rapid-melting-growth from micro-crystals during cooling. The micro-crystals density per-unit-length is proportional to stripe-width, which results in enlargement of lateral-growth-length by narrowing stripe-width. Consequently, giant-lateral-growth of SiGe grains (∼300-μm-length, 0-40%-Si-concentration) are achieved for narrow-stripe-width of 2 μm at 1050°C. This technique facilitates advanced TFT for high-performance system-in-displays.

AB - Formation of SiGe crystals with large-grain on insulating-substrates is desired to achieve high-speed thin-film-transistors (TFT). We examine rapid-thermal annealing (950-1100°C) of a-Si0.15Ge0.85-stripe (2-15-μm-stripe-width) on insulator structures in solid-liquid-coexisting temperature-region. Formation of Si-rich micro-crystal-nuclei during annealing is clearly evidenced, where Si concentration and areal-density of micro-crystals are uniquely determined by annealing-temperature. Such self-organized-seeding enables lateral rapid-melting-growth from micro-crystals during cooling. The micro-crystals density per-unit-length is proportional to stripe-width, which results in enlargement of lateral-growth-length by narrowing stripe-width. Consequently, giant-lateral-growth of SiGe grains (∼300-μm-length, 0-40%-Si-concentration) are achieved for narrow-stripe-width of 2 μm at 1050°C. This technique facilitates advanced TFT for high-performance system-in-displays.

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Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and rapid-melting-growth in solid-liquid coexisting region

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