Gettering of crystalline defects in Si by bending

R. Sawada, T. Karaki, J. Watanabe

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Suppression of oxidation-induced stacking faults and microdefects in a Si wafer, subjected to bending during thermal oxidation, was studied. Straight dislocations were introduced only at the neutral plane in Si bulk, during bending in a furnace and retained as sinks through all subsequent high-temperature processings, thereby continuing to suppress the formation of oxidation-induced stacking faults and microdefects. Gettering while applying bending stress to the wafer is described, including the formation mechanism for dislocations at the neutral region.

Original languageEnglish
Pages (from-to)368-369
Number of pages2
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 1981
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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