General relationship for cation and anion doping effects on ferroelectric HfO2 formation

L. Xu; S. Shibayama; K. Izukashi; T. Nishimura; T. Yajima; S. Migita; A. Toriumi

doi:10.1109/IEDM.2016.7838477

General relationship for cation and anion doping effects on ferroelectric HfO₂ formation

L. Xu, S. Shibayama, K. Izukashi, T. Nishimura, T. Yajima, S. Migita, A. Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

This work discusses the general relationship for cation and anion doping effects on the HfO₂ para-/ferroelectric transition, which will provide us a helpful instruction for precise HfO₂ ferroelectricity design. In addition, ferroelectric N-doped HfO₂ has been demonstrated as a gate dielectric film on an oxide semiconductor for ferroelectric field-effect transistors (FeFETs).

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	25.2.1-25.2.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838477
Publication status	Published - Jan 31 2017
Externally published	Yes
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: Dec 3 2016 → Dec 7 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	12/3/16 → 12/7/16

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1109/IEDM.2016.7838477

Cite this

Xu, L., Shibayama, S., Izukashi, K., Nishimura, T., Yajima, T., Migita, S., & Toriumi, A. (2017). General relationship for cation and anion doping effects on ferroelectric HfO₂ formation. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 25.2.1-25.2.4). Article 7838477 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838477

General relationship for cation and anion doping effects on ferroelectric HfO₂ formation. / Xu, L.; Shibayama, S.; Izukashi, K. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 25.2.1-25.2.4 7838477 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xu, L, Shibayama, S, Izukashi, K, Nishimura, T, Yajima, T, Migita, S & Toriumi, A 2017, General relationship for cation and anion doping effects on ferroelectric HfO₂ formation. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838477, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 25.2.1-25.2.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 12/3/16. https://doi.org/10.1109/IEDM.2016.7838477

Xu L, Shibayama S, Izukashi K, Nishimura T, Yajima T, Migita S et al. General relationship for cation and anion doping effects on ferroelectric HfO₂ formation. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 25.2.1-25.2.4. 7838477. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838477

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