Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1-xGex (0≤x≤1) on SiO2

Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

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43 Citations (Scopus)


The metal-induced low-temperature crystallization (MILC) of amorphous Si1-xGex on SiO2 was investigated. It was found that the growth velocity of MILC-Si1-xGex enhanced by 80% by increasing Ge fraction from 0% to 20% achieved poly-Si0.8Ge0.2 with large grains. Very sharp needle-like crystal regions were also obtained by optimizing the growth conditions.

Original languageEnglish
Pages (from-to)2148-2150
Number of pages3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - Mar 31 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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