Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1-xGex (0≤x≤1) on SiO2

Hiroshi Kanno; Isao Tsunoda; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

doi:10.1063/1.1564298

Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si_1-xGe_x (0≤x≤1) on SiO₂

Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

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Abstract

The metal-induced low-temperature crystallization (MILC) of amorphous Si_1-xGe_x on SiO₂ was investigated. It was found that the growth velocity of MILC-Si_1-xGe_x enhanced by 80% by increasing Ge fraction from 0% to 20% achieved poly-Si_0.8Ge_0.2 with large grains. Very sharp needle-like crystal regions were also obtained by optimizing the growth conditions.

Original language	English
Pages (from-to)	2148-2150
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	13
DOIs	https://doi.org/10.1063/1.1564298
Publication status	Published - Mar 31 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "The metal-induced low-temperature crystallization (MILC) of amorphous Si1-xGex on SiO2 was investigated. It was found that the growth velocity of MILC-Si1-xGex enhanced by 80% by increasing Ge fraction from 0% to 20% achieved poly-Si0.8Ge0.2 with large grains. Very sharp needle-like crystal regions were also obtained by optimizing the growth conditions.",

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T1 - Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1-xGex (0≤x≤1) on SiO2

AU - Kanno, Hiroshi

AU - Tsunoda, Isao

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2003/3/31

Y1 - 2003/3/31

N2 - The metal-induced low-temperature crystallization (MILC) of amorphous Si1-xGex on SiO2 was investigated. It was found that the growth velocity of MILC-Si1-xGex enhanced by 80% by increasing Ge fraction from 0% to 20% achieved poly-Si0.8Ge0.2 with large grains. Very sharp needle-like crystal regions were also obtained by optimizing the growth conditions.

AB - The metal-induced low-temperature crystallization (MILC) of amorphous Si1-xGex on SiO2 was investigated. It was found that the growth velocity of MILC-Si1-xGex enhanced by 80% by increasing Ge fraction from 0% to 20% achieved poly-Si0.8Ge0.2 with large grains. Very sharp needle-like crystal regions were also obtained by optimizing the growth conditions.

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JF - Applied Physics Letters

IS - 13

ER -

Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si_1-xGe_x (0≤x≤1) on SiO₂

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