Ge-enhanced MILC velocity in a-Ge/a-Si/SiO2 layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

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7 Citations (Scopus)


Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas (∼10 μm for 5 h and ∼30 μm for 15 h) were obtained after 550 °C annealing. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large-scale integrated circuits.

Original languageEnglish
Pages (from-to)83-88
Number of pages6
JournalMaterials Science in Semiconductor Processing
Issue number1-3 SPEC. ISS.
Publication statusPublished - Feb 2005

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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