Gate stack and source/drain junction formations for high-mobility Ge MOSFETs

Hiroshi Nakashima, Keisuke Yamamoto, Haigui Yang, Dong Wang

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS, high-quality gate-stack and source/drain (S/D) junction formations are essential. We fabricated Ge n- and p-MOSFETs using the gate-stack formation by bilayer (SiO2/GeO2) passivation and using S/D junction formations by thermal diffusion of P and ion implantation of B. The electron and hole channel mobilities of the fabricated MOSFETs were 1097 and 376 cm 2V-1s-1, respectively, despite the very thin GeO2 thickness. We will present the detailed fabrication method and device performance.

    Original languageEnglish
    Title of host publicationSiGe, Ge, and Related Compounds 5
    Subtitle of host publicationMaterials, Processing, and Devices
    PublisherElectrochemical Society Inc.
    Pages205-216
    Number of pages12
    Edition9
    ISBN (Print)9781607683575
    DOIs
    Publication statusPublished - 2013
    Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
    Duration: Oct 7 2012Oct 12 2012

    Publication series

    NameECS Transactions
    Number9
    Volume50
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
    Country/TerritoryUnited States
    CityHonolulu, HI
    Period10/7/1210/12/12

    All Science Journal Classification (ASJC) codes

    • General Engineering

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