Gate-bias dependent phonon softening observed in Ge MOSFETs

Shoichi Kabuyanagi; Tomonori Nishimura; Takeaki Yajima; Akira Toriumi

doi:10.1149/06910.0075ecst

Gate-bias dependent phonon softening observed in Ge MOSFETs

Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate impacts of free carriers on phonon frequency of zone-center optical phonon in Germanium (Ge). By taking advantage of Ge-on-insulator structure, Raman measurement with applying the back-gate bias was performed. The phonon softening was clearly observed by increasing hole density. It is also pointed out that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than dopant atom one. Furthermore, we show that the free carrier effect on phonon softening can be simply and reasonably interpreted from the view point of modification of the covalent bonding by free carriers.

Original language	English
Title of host publication	ULSI Process Integration 9
Editors	C. Claeys, J. Murota, M. Tao, H. Iwai, S. Deleonibus
Publisher	Electrochemical Society Inc.
Pages	75-80
Number of pages	6
Edition	10
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06910.0075ecst
Publication status	Published - 2015
Externally published	Yes
Event	Symposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	10
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on ULSI Process Integration 9 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/06910.0075ecst

Cite this

Gate-bias dependent phonon softening observed in Ge MOSFETs. / Kabuyanagi, Shoichi; Nishimura, Tomonori; Yajima, Takeaki et al.
ULSI Process Integration 9. ed. / C. Claeys; J. Murota; M. Tao; H. Iwai; S. Deleonibus. 10. ed. Electrochemical Society Inc., 2015. p. 75-80 (ECS Transactions; Vol. 69, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kabuyanagi, S, Nishimura, T, Yajima, T & Toriumi, A 2015, Gate-bias dependent phonon softening observed in Ge MOSFETs. in C Claeys, J Murota, M Tao, H Iwai & S Deleonibus (eds), ULSI Process Integration 9. 10 edn, ECS Transactions, no. 10, vol. 69, Electrochemical Society Inc., pp. 75-80, Symposium on ULSI Process Integration 9 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06910.0075ecst

@inproceedings{efc214190fda4ec6b0c9e8333c2b4119,

title = "Gate-bias dependent phonon softening observed in Ge MOSFETs",

abstract = "We investigate impacts of free carriers on phonon frequency of zone-center optical phonon in Germanium (Ge). By taking advantage of Ge-on-insulator structure, Raman measurement with applying the back-gate bias was performed. The phonon softening was clearly observed by increasing hole density. It is also pointed out that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than dopant atom one. Furthermore, we show that the free carrier effect on phonon softening can be simply and reasonably interpreted from the view point of modification of the covalent bonding by free carriers.",

author = "Shoichi Kabuyanagi and Tomonori Nishimura and Takeaki Yajima and Akira Toriumi",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on ULSI Process Integration 9 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",

year = "2015",

doi = "10.1149/06910.0075ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "10",

pages = "75--80",

editor = "C. Claeys and J. Murota and M. Tao and H. Iwai and S. Deleonibus",

booktitle = "ULSI Process Integration 9",

edition = "10",

}

TY - GEN

T1 - Gate-bias dependent phonon softening observed in Ge MOSFETs

AU - Kabuyanagi, Shoichi

AU - Nishimura, Tomonori

AU - Yajima, Takeaki

AU - Toriumi, Akira

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2015

Y1 - 2015

N2 - We investigate impacts of free carriers on phonon frequency of zone-center optical phonon in Germanium (Ge). By taking advantage of Ge-on-insulator structure, Raman measurement with applying the back-gate bias was performed. The phonon softening was clearly observed by increasing hole density. It is also pointed out that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than dopant atom one. Furthermore, we show that the free carrier effect on phonon softening can be simply and reasonably interpreted from the view point of modification of the covalent bonding by free carriers.

AB - We investigate impacts of free carriers on phonon frequency of zone-center optical phonon in Germanium (Ge). By taking advantage of Ge-on-insulator structure, Raman measurement with applying the back-gate bias was performed. The phonon softening was clearly observed by increasing hole density. It is also pointed out that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than dopant atom one. Furthermore, we show that the free carrier effect on phonon softening can be simply and reasonably interpreted from the view point of modification of the covalent bonding by free carriers.

UR - http://www.scopus.com/inward/record.url?scp=84946027093&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946027093&partnerID=8YFLogxK

U2 - 10.1149/06910.0075ecst

DO - 10.1149/06910.0075ecst

M3 - Conference contribution

AN - SCOPUS:84946027093

T3 - ECS Transactions

SP - 75

EP - 80

BT - ULSI Process Integration 9

A2 - Claeys, C.

A2 - Murota, J.

A2 - Tao, M.

A2 - Iwai, H.

A2 - Deleonibus, S.

PB - Electrochemical Society Inc.

T2 - Symposium on ULSI Process Integration 9 - 228th ECS Meeting

Y2 - 11 October 2015 through 15 October 2015

ER -

Gate-bias dependent phonon softening observed in Ge MOSFETs

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this