Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells

S. Fukatsu; N. Usami; Y. Kato; H. Sunamura; Y. Shiraki; H. Oku; T. Ohnishi; Y. Ohmori; K. Okumura

doi:10.1016/0022-0248(94)90432-4

Gas-source molecular beam epitaxy and luminescence characterization of strained Si_1-xGe_x/Si quantum wells

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, K. Okumura

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

We describe gas-source molecular beam epitaxy (MBE) and luminescence characterization of strain Si_1-xGe_x/Si quantum wells (QWs). Successful and reproducible growth of strained QWs is demonstrated, addressing the significance of selecting a higher growth temperature to establish a high degree of structural integrity and to maintain the crystallinity in terms of "optical" quality. Excellent heterointerface transcience was evidenced by an almost perfect match between the spectral shift due to exciton confinement and the theoretical calculation. A good spatial uniformity in terms of well width and composition was obtained when QWs are grown in the adsorption/dissociation-limited growth regime.

Original language	English
Pages (from-to)	315-321
Number of pages	7
Journal	Journal of Crystal Growth
Volume	136
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)90432-4
Publication status	Published - Mar 1 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(94)90432-4

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abstract = "We describe gas-source molecular beam epitaxy (MBE) and luminescence characterization of strain Si1-xGex/Si quantum wells (QWs). Successful and reproducible growth of strained QWs is demonstrated, addressing the significance of selecting a higher growth temperature to establish a high degree of structural integrity and to maintain the crystallinity in terms of {"}optical{"} quality. Excellent heterointerface transcience was evidenced by an almost perfect match between the spectral shift due to exciton confinement and the theoretical calculation. A good spatial uniformity in terms of well width and composition was obtained when QWs are grown in the adsorption/dissociation-limited growth regime.",

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T1 - Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells

AU - Fukatsu, S.

AU - Usami, N.

AU - Kato, Y.

AU - Sunamura, H.

AU - Shiraki, Y.

AU - Oku, H.

AU - Ohnishi, T.

AU - Ohmori, Y.

AU - Okumura, K.

PY - 1994/3/1

Y1 - 1994/3/1

N2 - We describe gas-source molecular beam epitaxy (MBE) and luminescence characterization of strain Si1-xGex/Si quantum wells (QWs). Successful and reproducible growth of strained QWs is demonstrated, addressing the significance of selecting a higher growth temperature to establish a high degree of structural integrity and to maintain the crystallinity in terms of "optical" quality. Excellent heterointerface transcience was evidenced by an almost perfect match between the spectral shift due to exciton confinement and the theoretical calculation. A good spatial uniformity in terms of well width and composition was obtained when QWs are grown in the adsorption/dissociation-limited growth regime.

AB - We describe gas-source molecular beam epitaxy (MBE) and luminescence characterization of strain Si1-xGex/Si quantum wells (QWs). Successful and reproducible growth of strained QWs is demonstrated, addressing the significance of selecting a higher growth temperature to establish a high degree of structural integrity and to maintain the crystallinity in terms of "optical" quality. Excellent heterointerface transcience was evidenced by an almost perfect match between the spectral shift due to exciton confinement and the theoretical calculation. A good spatial uniformity in terms of well width and composition was obtained when QWs are grown in the adsorption/dissociation-limited growth regime.

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Gas-source molecular beam epitaxy and luminescence characterization of strained Si_1-xGe_x/Si quantum wells

Abstract

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