GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

Qingpeng Wang; Jin Ping Ao; Pangpang Wang; Ying Jiang; Liuan Li; Kazuya Kawaharada; Yang Liu

doi:10.1007/s11706-015-0286-8

GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

Qingpeng Wang, Jin Ping Ao, Pangpang Wang, Ying Jiang, Liuan Li, Kazuya Kawaharada, Yang Liu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm²·V⁻¹·s⁻¹. The effects of etching gas of Cl₂ and SiCl₄ were investigated in the gate recess process. SiCl₄-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO₂-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

Original language	English
Pages (from-to)	151-155
Number of pages	5
Journal	Frontiers of Materials Science
Volume	9
Issue number	2
DOIs	https://doi.org/10.1007/s11706-015-0286-8
Publication status	Published - Jun 26 2015

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1007/s11706-015-0286-8

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title = "GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate",

abstract = "GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V−1·s−1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.",

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T1 - GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

AU - Wang, Qingpeng

AU - Ao, Jin Ping

AU - Wang, Pangpang

AU - Jiang, Ying

AU - Li, Liuan

AU - Kawaharada, Kazuya

AU - Liu, Yang

PY - 2015/6/26

Y1 - 2015/6/26

N2 - GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V−1·s−1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

AB - GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V−1·s−1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

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GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

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