GaN-HEMTs for high-voltage switching applications

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


GaN HEMTs can realize high-power-density operation with low power loss in power electronic systems due to ultra low specific on-resistance below the Si-limit. The dynamic on-resistance, however, is degraded by the current collapse phenomena. The relation between the dynamic on-resistance and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. Yellow luminescence intensity strongly related with current collapse phenomena and can be utilized as a useful index for improving the wafer quality. High speed switching was obtained at the turn-off switching test with an inductive load. The switching speed of the GaN-HEMT can be controlled by the external gate resistance as same manner as the conventional Si-MOSFET. For the compatibility with the same loss and dV/dt, the gate resistance must be set to 10 times higher than that at the Si-MOSFET due to low Qgd.

Original languageEnglish
Title of host publicationGallium Nitride and Silicon Carbide Power Technologies
PublisherElectrochemical Society Inc.
Number of pages7
ISBN (Electronic)9781607682622
ISBN (Print)9781566779081
Publication statusPublished - 2011
Externally publishedYes
EventGallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 9 2011Oct 14 2011

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


ConferenceGallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting
Country/TerritoryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • General Engineering


Dive into the research topics of 'GaN-HEMTs for high-voltage switching applications'. Together they form a unique fingerprint.

Cite this