GaN-based complementary metal-oxide- semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

Akira Nakajima, Shunsuke Kubota, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Shin Ichi Nishizawa, Hiromichi Ohashi

    Research output: Contribution to journal › Article › peer-review

    31 Citations (Scopus)

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