GaAs MESFET distributed baseband amplifier IC with allpass filter network

S. Kimura; Y. Imai; H. Kikuchi; M. Tokumitsu

doi:10.1049/el:19981510

GaAs MESFET distributed baseband amplifier IC with allpass filter network

S. Kimura, Y. Imai, H. Kikuchi, M. Tokumitsu

Research output: Contribution to journal › Article › peer-review

Abstract

A distributed baseband amplifier integrated circuits (IC) which uses an allpass-filter configuration and three-dimensional transmission lines is described. An IC fabricated using 0.1 μm gatelength GaAs MESFETS has a 0 to > 62.5GHz bandwidth with a flat gain of 10dB. Its group delay variation in the 0-50GHz band is only 12.4ps. This is ∼17ps smaller than that of a conventional distributed baseband amplifier IC.

Original language	English
Pages (from-to)	2124-2126
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	22
DOIs	https://doi.org/10.1049/el:19981510
Publication status	Published - Oct 29 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19981510

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title = "GaAs MESFET distributed baseband amplifier IC with allpass filter network",

abstract = "A distributed baseband amplifier integrated circuits (IC) which uses an allpass-filter configuration and three-dimensional transmission lines is described. An IC fabricated using 0.1 μm gatelength GaAs MESFETS has a 0 to > 62.5GHz bandwidth with a flat gain of 10dB. Its group delay variation in the 0-50GHz band is only 12.4ps. This is ∼17ps smaller than that of a conventional distributed baseband amplifier IC.",

author = "S. Kimura and Y. Imai and H. Kikuchi and M. Tokumitsu",

year = "1998",

month = oct,

day = "29",

doi = "10.1049/el:19981510",

language = "English",

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journal = "Electronics Letters",

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T1 - GaAs MESFET distributed baseband amplifier IC with allpass filter network

AU - Kimura, S.

AU - Imai, Y.

AU - Kikuchi, H.

AU - Tokumitsu, M.

PY - 1998/10/29

Y1 - 1998/10/29

N2 - A distributed baseband amplifier integrated circuits (IC) which uses an allpass-filter configuration and three-dimensional transmission lines is described. An IC fabricated using 0.1 μm gatelength GaAs MESFETS has a 0 to > 62.5GHz bandwidth with a flat gain of 10dB. Its group delay variation in the 0-50GHz band is only 12.4ps. This is ∼17ps smaller than that of a conventional distributed baseband amplifier IC.

AB - A distributed baseband amplifier integrated circuits (IC) which uses an allpass-filter configuration and three-dimensional transmission lines is described. An IC fabricated using 0.1 μm gatelength GaAs MESFETS has a 0 to > 62.5GHz bandwidth with a flat gain of 10dB. Its group delay variation in the 0-50GHz band is only 12.4ps. This is ∼17ps smaller than that of a conventional distributed baseband amplifier IC.

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GaAs MESFET distributed baseband amplifier IC with allpass filter network

Abstract

All Science Journal Classification (ASJC) codes

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