Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °c)

Ryota Kuwahata; Haisong Jiang; Kiichi Hamamoto

doi:10.23919/MOC46630.2019.8982763

Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °c)

Ryota Kuwahata, Haisong Jiang, Kiichi Hamamoto

Electrical Engineering Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We have studied the saturation output power of 1.3-μm wavelength quantum dot semiconductor optical amplifier (QD-SOA) under high temperature by using Fabry-Pérot laser diode structure. The saturation output power of 5 dBm has been confirmed under 85°C with a single stripe device (375 μm length).

Original language	English
Title of host publication	MOC 2019 - 24th Microoptics Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	180-181
Number of pages	2
ISBN (Electronic)	9784863487123
DOIs	https://doi.org/10.23919/MOC46630.2019.8982763
Publication status	Published - Nov 2019
Event	24th Microoptics Conference, MOC 2019 - Toyama, Japan Duration: Nov 17 2019 → Nov 20 2019

Publication series

Name	MOC 2019 - 24th Microoptics Conference

Conference

Conference	24th Microoptics Conference, MOC 2019
Country/Territory	Japan
City	Toyama
Period	11/17/19 → 11/20/19

All Science Journal Classification (ASJC) codes

Instrumentation
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.23919/MOC46630.2019.8982763

Cite this

Kuwahata, R., Jiang, H., & Hamamoto, K. (2019). Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °c). In MOC 2019 - 24th Microoptics Conference (pp. 180-181). Article 8982763 (MOC 2019 - 24th Microoptics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/MOC46630.2019.8982763

Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °c). / Kuwahata, Ryota; Jiang, Haisong ; Hamamoto, Kiichi.
MOC 2019 - 24th Microoptics Conference. Institute of Electrical and Electronics Engineers Inc., 2019. p. 180-181 8982763 (MOC 2019 - 24th Microoptics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kuwahata, R, Jiang, H & Hamamoto, K 2019, Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °c). in MOC 2019 - 24th Microoptics Conference., 8982763, MOC 2019 - 24th Microoptics Conference, Institute of Electrical and Electronics Engineers Inc., pp. 180-181, 24th Microoptics Conference, MOC 2019, Toyama, Japan, 11/17/19. https://doi.org/10.23919/MOC46630.2019.8982763

@inproceedings{52a9a093804f4e4aa26252ba452a7563,

title = "Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °c)",

abstract = "We have studied the saturation output power of 1.3-μm wavelength quantum dot semiconductor optical amplifier (QD-SOA) under high temperature by using Fabry-P{\'e}rot laser diode structure. The saturation output power of 5 dBm has been confirmed under 85°C with a single stripe device (375 μm length).",

author = "Ryota Kuwahata and Haisong Jiang and Kiichi Hamamoto",

year = "2019",

month = nov,

doi = "10.23919/MOC46630.2019.8982763",

language = "English",

series = "MOC 2019 - 24th Microoptics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "180--181",

booktitle = "MOC 2019 - 24th Microoptics Conference",

address = "United States",

note = "24th Microoptics Conference, MOC 2019 ; Conference date: 17-11-2019 Through 20-11-2019",

}

TY - GEN

T1 - Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °c)

AU - Kuwahata, Ryota

AU - Jiang, Haisong

AU - Hamamoto, Kiichi

PY - 2019/11

Y1 - 2019/11

N2 - We have studied the saturation output power of 1.3-μm wavelength quantum dot semiconductor optical amplifier (QD-SOA) under high temperature by using Fabry-Pérot laser diode structure. The saturation output power of 5 dBm has been confirmed under 85°C with a single stripe device (375 μm length).

AB - We have studied the saturation output power of 1.3-μm wavelength quantum dot semiconductor optical amplifier (QD-SOA) under high temperature by using Fabry-Pérot laser diode structure. The saturation output power of 5 dBm has been confirmed under 85°C with a single stripe device (375 μm length).

UR - http://www.scopus.com/inward/record.url?scp=85081098195&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85081098195&partnerID=8YFLogxK

U2 - 10.23919/MOC46630.2019.8982763

DO - 10.23919/MOC46630.2019.8982763

M3 - Conference contribution

T3 - MOC 2019 - 24th Microoptics Conference

SP - 180

EP - 181

BT - MOC 2019 - 24th Microoptics Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th Microoptics Conference, MOC 2019

Y2 - 17 November 2019 through 20 November 2019

ER -

Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °c)

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

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