Formation process of CuCl nano-particles in silica glass by ion implantation

K. Fukumi, A. Chayahara, H. Kageyama, K. Kadono, T. Akai, N. Kitamura, H. Mizoguchi, Y. Horino, M. Makihara, K. Fujii, J. Hayakawa

Research output: Contribution to journalConference articlepeer-review

18 Citations (Scopus)


The formation process of CuCl crystals has been studied in (3 MeV 6×1016 Cl2+ ions/cm2+3 MeV 6×1016 Cu2+ ions/cm2)-implanted silica glass by X-ray absorption spectroscopy and secondary ion mass spectroscopy. It was found from X-ray absorption spectroscopy that Cu atoms were mainly coordinated by oxygen atoms in as-implanted glass. Heat-treatment at 600 °C caused the formation of Cu-Cl bonds and heat-treatment at 1000 °C caused the formation of CuCl crystals in silica. It was deduced that the migration of Cl atoms is a rate-determining step for the formation of CuCl crystal, on the basis of the conventional precipitation model.

Original languageEnglish
Pages (from-to)93-99
Number of pages7
JournalJournal of Non-Crystalline Solids
Issue number1-3
Publication statusPublished - Nov 2 1999
Externally publishedYes
EventProceedings of the 1998 Symposium on Advances in Photonic Glasses - Kyongju, Korea
Duration: Sept 20 1998Sept 23 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry


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