The channeling implantation of oxygen into n-type GaAs has been studied in order to form thick and thermally stable high-resistivity-layers. Carrier removal profiles and deep trapping levels are measured by the C-V and DLTS techniques in both oxygen- and proton-implanted layers. The C-V measurements show that the carrier removal by oxygen implantation is stable at least up to 800°C, and the DLTS measurements show that two trap levels exist in oxygen-implanted layers after annealing at 800°C while only one level is observable in unimplanted and proton-implanted layers. It is demonstrated that the carrier removal depth by the oxygen channeling implantation is about twice as deep as that by conventional random implantation.
All Science Journal Classification (ASJC) codes
- General Engineering
- General Physics and Astronomy