@inproceedings{1bd8977410d7498cad4dd15629ebefd7,
title = "Formation of solution-derived SiO2 thin films by CO2 laser annealing for polycrystalline silicon thin film transistors",
abstract = "Formation of perhydropolysilazane based SiO2 film by CO2 laser annealing was investigated. Polycrystalline silicon thin film transistors with the SiO2 film as a gate insulator were fabricated. The TFT showed the field effect mobility of 27 cm2/vs and hysteresis shift of -0.11 V. We considered the cause of the hysteresis.",
author = "Daisuke Hishitani and Masahiro Horita and Yasuaki Ishikawa and Yosuke Watanabe and Hiroshi Ikenoue and Yukiharu Uraoka",
year = "2014",
month = jan,
day = "1",
language = "English",
series = "21st International Display Workshops 2014, IDW 2014",
publisher = "Society for Information Display",
pages = "261--262",
booktitle = "21st International Display Workshops 2014, IDW 2014",
address = "United States",
note = "21st International Display Workshops 2014, IDW 2014 ; Conference date: 03-12-2014 Through 05-12-2014",
}