Formation of Si/SiC heterostructures on Si(100) by hot-filament-assisted CH3SiH3 gas jet chemical vapor deposition

Ryota Ohtani; Yoshifumi Ikoma; Teruaki Motooka

doi:10.1143/JJAP.45.2514

Formation of Si/SiC heterostructures on Si(100) by hot-filament-assisted CH₃SiH₃ gas jet chemical vapor deposition

Ryota Ohtani, Yoshifumi Ikoma, Teruaki Motooka

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH₃SiH₃. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850°C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850°C with the assistance of a tungsten hot-filament at ∼1800°C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH ₃SiH₃ jet irradiation.

Original language	English
Pages (from-to)	2514-2515
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.45.2514
Publication status	Published - Apr 7 2006

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Formation of Si/SiC heterostructures on Si(100) by hot-filament-assisted CH3SiH3 gas jet chemical vapor deposition",

abstract = "We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850°C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850°C with the assistance of a tungsten hot-filament at ∼1800°C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH 3SiH3 jet irradiation.",

author = "Ryota Ohtani and Yoshifumi Ikoma and Teruaki Motooka",

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T1 - Formation of Si/SiC heterostructures on Si(100) by hot-filament-assisted CH3SiH3 gas jet chemical vapor deposition

AU - Ohtani, Ryota

AU - Ikoma, Yoshifumi

AU - Motooka, Teruaki

PY - 2006/4/7

Y1 - 2006/4/7

N2 - We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850°C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850°C with the assistance of a tungsten hot-filament at ∼1800°C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH 3SiH3 jet irradiation.

AB - We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850°C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850°C with the assistance of a tungsten hot-filament at ∼1800°C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH 3SiH3 jet irradiation.

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ER -

Formation of Si/SiC heterostructures on Si(100) by hot-filament-assisted CH₃SiH₃ gas jet chemical vapor deposition

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